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Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells

Author

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  • Paweł Węgierek

    (Faculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38 A, 20-618 Lublin, Poland)

  • Justyna Pastuszak

    (Faculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38 A, 20-618 Lublin, Poland)

  • Kamil Dziadosz

    (Faculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38 A, 20-618 Lublin, Poland)

  • Marcin Turek

    (Institute of Physics, Maria Curie-Sklodowska University in Lublin, pl. M.Curie-Sklodowskiej 1, 20-031 Lublin, Poland)

Abstract

The main goal of this work was to conduct a comparative analysis of the electrical properties of the silicon implanted with neon ions, depending on the dose of ions and the type of substrate doping, for the possibility of generating additional energy levels by ion implantation in terms of improving the efficiency of photovoltaic cells made on its basis. The article presents the results of research on the capacitance and conductance of silicon samples doped with boron and phosphorus, the structure of which was modified in the implantation process with Ne + ions with energy E = 100 keV and different doses. The analysis of changes in electrical properties recorded at the annealing temperature of the samples T a = 298 K, 473 K, 598 K, 673 K, and 873 K, concerned the influence of the test temperature in the range from 203 K to 373 K, as well as the frequency f from 100 Hz to 10 MHz, and voltage U from 0.25 V to 2 V. It was possible to detect intermediate bands in the tested samples and determine their position in the band gap by estimating the activation energy value. By means of implantation, it is possible to modify the width of the silicon energy gap, the value of which directly affects the efficiency of the photovoltaic cell made on its basis. By introducing appropriate defects into the silicon crystal lattice, contributing to a change in the value of the energy gap E g , it is possible to increase the efficiency of the solar cell. On the basis of the obtained results, it can be seen that the highest activation energies are achieved for samples doped with phosphorus.

Suggested Citation

  • Paweł Węgierek & Justyna Pastuszak & Kamil Dziadosz & Marcin Turek, 2020. "Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells," Energies, MDPI, vol. 13(24), pages 1-17, December.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:24:p:6708-:d:464987
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    References listed on IDEAS

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    1. Sunhwa Lee & Duy Phong Pham & Youngkuk Kim & Eun-Chel Cho & Jinjoo Park & Junsin Yi, 2020. "Influence of the Carrier Selective Front Contact Layer and Defect State of a-Si:H/c-Si Interface on the Rear Emitter Silicon Heterojunction Solar Cells," Energies, MDPI, vol. 13(11), pages 1-11, June.
    2. Agata Zdyb & Slawomir Gulkowski, 2020. "Performance Assessment of Four Different Photovoltaic Technologies in Poland," Energies, MDPI, vol. 13(1), pages 1-17, January.
    3. Cheolmin Park & Gyeongbae Shim & Nagarajan Balaji & Jinjoo Park & Junsin Yi, 2020. "Correlation between Boron–Silicon Bonding Coordination, Oxygen Complexes and Electrical Properties for n-Type c-Si Solar Cell Applications," Energies, MDPI, vol. 13(12), pages 1-10, June.
    4. Adarsh Vaderobli & Dev Parikh & Urmila Diwekar, 2020. "Optimization under Uncertainty to Reduce the Cost of Energy for Parabolic Trough Solar Power Plants for Different Weather Conditions," Energies, MDPI, vol. 13(12), pages 1-17, June.
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    1. Dominika Siwiec & Andrzej Pacana, 2021. "Model of Choice Photovoltaic Panels Considering Customers’ Expectations," Energies, MDPI, vol. 14(18), pages 1-32, September.

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