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Electrothermal Model of SiC Power BJT

Author

Listed:
  • Joanna Patrzyk

    (Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland)

  • Damian Bisewski

    (Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland)

  • Janusz Zarębski

    (Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland)

Abstract

This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.

Suggested Citation

  • Joanna Patrzyk & Damian Bisewski & Janusz Zarębski, 2020. "Electrothermal Model of SiC Power BJT," Energies, MDPI, vol. 13(10), pages 1-9, May.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:10:p:2617-:d:360999
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    References listed on IDEAS

    as
    1. Krzysztof Górecki & Kalina Detka, 2019. "Influence of Power Losses in the Inductor Core on Characteristics of Selected DC–DC Converters," Energies, MDPI, vol. 12(10), pages 1-15, May.
    2. Marcin Janicki & Tomasz Torzewicz & Przemysław Ptak & Tomasz Raszkowski & Agnieszka Samson & Krzysztof Górecki, 2019. "Parametric Compact Thermal Models of Power LEDs," Energies, MDPI, vol. 12(9), pages 1-10, May.
    3. Kamil Bargieł & Damian Bisewski & Janusz Zarębski, 2020. "Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)," Energies, MDPI, vol. 13(1), pages 1-9, January.
    4. Zhijian Feng & Xing Zhang & Jianing Wang & Shaolin Yu, 2020. "A High-Efficiency Three-Level ANPC Inverter Based on Hybrid SiC and Si Devices," Energies, MDPI, vol. 13(5), pages 1-14, March.
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