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Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Author

Listed:
  • Kamil Bargieł

    (Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland)

  • Damian Bisewski

    (Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland)

  • Janusz Zarębski

    (Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland)

Abstract

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Suggested Citation

  • Kamil Bargieł & Damian Bisewski & Janusz Zarębski, 2020. "Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)," Energies, MDPI, vol. 13(1), pages 1-9, January.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:1:p:187-:d:304019
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    References listed on IDEAS

    as
    1. Pablo Fernández-Martínez & David Flores & Salvador Hidalgo & Xavier Jordà & Xavier Perpiñà & David Quirion & Lucia Ré & Miguel Ullán & Miquel Vellvehí, 2017. "A New Vertical JFET Power Device for Harsh Radiation Environments," Energies, MDPI, vol. 10(2), pages 1-16, February.
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    Cited by:

    1. Joanna Patrzyk & Damian Bisewski & Janusz Zarębski, 2020. "Electrothermal Model of SiC Power BJT," Energies, MDPI, vol. 13(10), pages 1-9, May.

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