Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Due to our limited knowledge about silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (d V DS /d t ) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. Turn-off variation in voltage is not a strong function of temperature, whereas the turn-on variation in voltage has a monotonic relationship with temperature. The temperature dependence is a result of the competing effects between the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in SiC MOSFETs. The relationship between variation in voltage and supply voltage, load current, and gate resistance are also discussed. A temperature-based analytical model of d V DS /d t for SiC MOSFETs was derived in terms of internal parasitic capacitances during the charging and discharging processes at the voltage fall period during turn-on, and the rise period during turn-off. The calculation results were close to the experimental measurements. These results provide a potential junction temperature estimation approach for SiC MOSFETs. In SiC MOSFET-based practical applications, if the turn on d V DS /d t is sensed, the device temperature can be estimated from the relationship curve of turn on d V DS /d t versus temperature drawn in advance.