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Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration

Author

Listed:
  • Yu Liu

    (Fudan University
    Fudan University)

  • Shuzhang Yang

    (Fudan University)

  • Lina Hua

    (Fudan University)

  • Xiaomin Yang

    (Fudan University)

  • Enlong Li

    (Fudan University)

  • Jincheng Wen

    (Fudan University)

  • Yanqiu Wu

    (Fudan University)

  • Liping Zhu

    (Fudan University)

  • Yingguo Yang

    (Fudan University)

  • Yan Zhao

    (Fudan University)

  • Zhenghua An

    (Fudan University)

  • Junhao Chu

    (Fudan University
    Fudan University)

  • Wenwu Li

    (Fudan University
    Fudan University)

Abstract

Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in ferroelectric transistors and nonvolatile memory. However, it is difficult to prepare a Sn-based perovskite film with both robust ferroelectric and semiconductor properties. Here, by doping with 2-methylbenzimidazole, Sn-based perovskite [93.3 mol% (FA0.86Cs0.14)SnI3 and 6.7 mol% PEA2SnI4] semiconductor films are transformed into ferroelectric semiconductor films, owing to molecular reconfiguration. The reconfigured ferroelectric semiconductors exhibit a high remanent polarization (Pr) of 23.2 μC/cm2. The emergence of ferroelectricity can be ascribed to the hydrogen bond enhancement after imidazole molecular doping, and then the spatial symmetry breaks causing the positive and negative charge centers to become non-coincident. Remarkably, the transistors based on perovskite ferroelectric semiconductors have a low subthreshold swing of 67 mv/dec, which further substantiates the superiority of introducing ferroelectricity. This work has developed a method to realize Sn-based ferroelectric semiconductor films for electronic device applications.

Suggested Citation

  • Yu Liu & Shuzhang Yang & Lina Hua & Xiaomin Yang & Enlong Li & Jincheng Wen & Yanqiu Wu & Liping Zhu & Yingguo Yang & Yan Zhao & Zhenghua An & Junhao Chu & Wenwu Li, 2025. "Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration," Nature Communications, Nature, vol. 16(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-024-55113-0
    DOI: 10.1038/s41467-024-55113-0
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    References listed on IDEAS

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    1. Xiaowei Wang & Peng Yu & Zhendong Lei & Chao Zhu & Xun Cao & Fucai Liu & Lu You & Qingsheng Zeng & Ya Deng & Chao Zhu & Jiadong Zhou & Qundong Fu & Junling Wang & Yizhong Huang & Zheng Liu, 2019. "Van der Waals negative capacitance transistors," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    2. Naoki Higashitarumizu & Hayami Kawamoto & Chien-Ju Lee & Bo-Han Lin & Fu-Hsien Chu & Itsuki Yonemori & Tomonori Nishimura & Katsunori Wakabayashi & Wen-Hao Chang & Kosuke Nagashio, 2020. "Purely in-plane ferroelectricity in monolayer SnS at room temperature," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
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