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Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Author

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  • Yasuyuki Kobayashi

    (NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan)

  • Kazuhide Kumakura

    (NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan)

  • Tetsuya Akasaka

    (NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan)

  • Toshiki Makimoto

    (NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan)

Abstract

Introducing an extremely thin layer of boron nitride between a sapphire substrate and the gallium nitride semiconductor grown on it is shown to facilitate the transfer of the resulting nitride structures to more flexible and affordable substrates.

Suggested Citation

  • Yasuyuki Kobayashi & Kazuhide Kumakura & Tetsuya Akasaka & Toshiki Makimoto, 2012. "Layered boron nitride as a release layer for mechanical transfer of GaN-based devices," Nature, Nature, vol. 484(7393), pages 223-227, April.
    • Handle: RePEc:nat:nature:v:484:y:2012:i:7393:d:10.1038_nature10970
    DOI: 10.1038/nature10970
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    Cited by:

    1. Gaffuri, Pierre & Stolyarova, Elena & Llerena, Daniel & Appert, Estelle & Consonni, Marianne & Robin, Stéphane & Consonni, Vincent, 2021. "Potential substitutes for critical materials in white LEDs: Technological challenges and market opportunities," Renewable and Sustainable Energy Reviews, Elsevier, vol. 143(C).

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