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Towards layer-selective quantum spin hall channels in weak topological insulator Bi4Br2I2

Author

Listed:
  • Jingyuan Zhong

    (Beihang University, Haidian District)

  • Ming Yang

    (Beihang University, Haidian District)

  • Zhijian Shi

    (Beihang University, Haidian District)

  • Yaqi Li

    (Beihang University, Haidian District)

  • Dan Mu

    (Xiangtan University)

  • Yundan Liu

    (Xiangtan University)

  • Ningyan Cheng

    (Anhui University)

  • Wenxuan Zhao

    (Tsinghua University)

  • Weichang Hao

    (Beihang University, Haidian District
    Beihang University)

  • Jianfeng Wang

    (Beihang University, Haidian District)

  • Lexian Yang

    (Tsinghua University)

  • Jincheng Zhuang

    (Beihang University, Haidian District
    Beihang University)

  • Yi Du

    (Beihang University, Haidian District
    Beihang University)

Abstract

Weak topological insulators, constructed by stacking quantum spin Hall insulators with weak interlayer coupling, offer promising quantum electronic applications through topologically non-trivial edge channels. However, the currently available weak topological insulators are stacks of the same quantum spin Hall layer with translational symmetry in the out-of-plane direction—leading to the absence of the channel degree of freedom for edge states. Here, we study a candidate weak topological insulator, Bi4Br2I2, which is alternately stacked by three different quantum spin Hall insulators, each with tunable topologically non-trivial edge states. Our angle-resolved photoemission spectroscopy and first-principles calculations show that an energy gap opens at the crossing points of different Dirac cones correlated with different layers due to the interlayer interaction. This is essential to achieve the tunability of topological edge states as controlled by varying the chemical potential. Our work offers a perspective for the construction of tunable quantized conductance devices for future spintronic applications.

Suggested Citation

  • Jingyuan Zhong & Ming Yang & Zhijian Shi & Yaqi Li & Dan Mu & Yundan Liu & Ningyan Cheng & Wenxuan Zhao & Weichang Hao & Jianfeng Wang & Lexian Yang & Jincheng Zhuang & Yi Du, 2023. "Towards layer-selective quantum spin hall channels in weak topological insulator Bi4Br2I2," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40735-7
    DOI: 10.1038/s41467-023-40735-7
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    References listed on IDEAS

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    1. Ryo Noguchi & T. Takahashi & K. Kuroda & M. Ochi & T. Shirasawa & M. Sakano & C. Bareille & M. Nakayama & M. D. Watson & K. Yaji & A. Harasawa & H. Iwasawa & P. Dudin & T. K. Kim & M. Hoesch & V. Kand, 2019. "A weak topological insulator state in quasi-one-dimensional bismuth iodide," Nature, Nature, vol. 566(7745), pages 518-522, February.
    2. Peng Zhang & Ryo Noguchi & Kenta Kuroda & Chun Lin & Kaishu Kawaguchi & Koichiro Yaji & Ayumi Harasawa & Mikk Lippmaa & Simin Nie & Hongming Weng & V. Kandyba & A. Giampietri & A. Barinov & Qiang Li &, 2021. "Observation and control of the weak topological insulator state in ZrTe5," Nature Communications, Nature, vol. 12(1), pages 1-7, December.
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    Cited by:

    1. Wenxuan Zhao & Ming Yang & Runzhe Xu & Xian Du & Yidian Li & Kaiyi Zhai & Cheng Peng & Ding Pei & Han Gao & Yiwei Li & Lixuan Xu & Junfeng Han & Yuan Huang & Zhongkai Liu & Yugui Yao & Jincheng Zhuang, 2023. "Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

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