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High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy

Author

Listed:
  • Marti Checa

    (Oak Ridge National Laboratory)

  • Addis S. Fuhr

    (Oak Ridge National Laboratory)

  • Changhyo Sun

    (Sungkyunkwan University)

  • Rama Vasudevan

    (Oak Ridge National Laboratory)

  • Maxim Ziatdinov

    (Oak Ridge National Laboratory
    Oak Ridge National Laboratory)

  • Ilia Ivanov

    (Oak Ridge National Laboratory)

  • Seok Joon Yun

    (Oak Ridge National Laboratory
    University of Ulsan)

  • Kai Xiao

    (Oak Ridge National Laboratory)

  • Alp Sehirlioglu

    (Case Western Reserve University)

  • Yunseok Kim

    (Sungkyunkwan University)

  • Pankaj Sharma

    (Flinders University
    UNSW Sydney)

  • Kyle P. Kelley

    (Oak Ridge National Laboratory)

  • Neus Domingo

    (Oak Ridge National Laboratory)

  • Stephen Jesse

    (Oak Ridge National Laboratory)

  • Liam Collins

    (Oak Ridge National Laboratory)

Abstract

Unraveling local dynamic charge processes is vital for progress in diverse fields, from microelectronics to energy storage. This relies on the ability to map charge carrier motion across multiple length- and timescales and understanding how these processes interact with the inherent material heterogeneities. Towards addressing this challenge, we introduce high-speed sparse scanning Kelvin probe force microscopy, which combines sparse scanning and image reconstruction. This approach is shown to enable sub-second imaging (>3 frames per second) of nanoscale charge dynamics, representing several orders of magnitude improvement over traditional Kelvin probe force microscopy imaging rates. Bridging this improved spatiotemporal resolution with macroscale device measurements, we successfully visualize electrochemically mediated diffusion of mobile surface ions on a LaAlO3/SrTiO3 planar device. Such processes are known to impact band-alignment and charge-transfer dynamics at these heterointerfaces. Furthermore, we monitor the diffusion of oxygen vacancies at the single grain level in polycrystalline TiO2. Through temperature-dependent measurements, we identify a charge diffusion activation energy of 0.18 eV, in good agreement with previously reported values and confirmed by DFT calculations. Together, these findings highlight the effectiveness and versatility of our method in understanding ionic charge carrier motion in microelectronics or nanoscale material systems.

Suggested Citation

  • Marti Checa & Addis S. Fuhr & Changhyo Sun & Rama Vasudevan & Maxim Ziatdinov & Ilia Ivanov & Seok Joon Yun & Kai Xiao & Alp Sehirlioglu & Yunseok Kim & Pankaj Sharma & Kyle P. Kelley & Neus Domingo &, 2023. "High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy," Nature Communications, Nature, vol. 14(1), pages 1-12, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-42583-x
    DOI: 10.1038/s41467-023-42583-x
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    References listed on IDEAS

    as
    1. A. Ohtomo & H. Y. Hwang, 2004. "A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface," Nature, Nature, vol. 427(6973), pages 423-426, January.
    2. Yan Tang & Chithra Asokan & Mingjie Xu & George W. Graham & Xiaoqing Pan & Phillip Christopher & Jun Li & Philippe Sautet, 2019. "Rh single atoms on TiO2 dynamically respond to reaction conditions by adapting their site," Nature Communications, Nature, vol. 10(1), pages 1-10, December.
    3. Yuchao Yang & Peng Gao & Siddharth Gaba & Ting Chang & Xiaoqing Pan & Wei Lu, 2012. "Observation of conducting filament growth in nanoscale resistive memories," Nature Communications, Nature, vol. 3(1), pages 1-8, January.
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