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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

Author

Listed:
  • Jubin Nathawat

    (University at Buffalo, the State University of New York)

  • Ishiaka Mansaray

    (University at Buffalo, the State University of New York)

  • Kohei Sakanashi

    (Chiba University, Inage-ku)

  • Naoto Wada

    (Chiba University, Inage-ku)

  • Michael D. Randle

    (University at Buffalo, the State University of New York)

  • Shenchu Yin

    (University at Buffalo, the State University of New York)

  • Keke He

    (University at Buffalo, the State University of New York)

  • Nargess Arabchigavkani

    (University at Buffalo, the State University of New York)

  • Ripudaman Dixit

    (University at Buffalo, the State University of New York)

  • Bilal Barut

    (University at Buffalo, the State University of New York)

  • Miao Zhao

    (Institute of Microelectronics of Chinese Academy of Sciences)

  • Harihara Ramamoorthy

    (King Mongkut’s Institute of Technology Ladkrabang)

  • Ratchanok Somphonsane

    (King Mongkut’s Institute of Technology Ladkrabang)

  • Gil-Ho Kim

    (Sungkyunkwan University)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Nobuyuki Aoki

    (Chiba University, Inage-ku)

  • Jong E. Han

    (University at Buffalo, the State University of New York)

  • Jonathan P. Bird

    (University at Buffalo, the State University of New York
    University at Buffalo, the State University of New York)

Abstract

Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the “Moiré bands”, we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.

Suggested Citation

  • Jubin Nathawat & Ishiaka Mansaray & Kohei Sakanashi & Naoto Wada & Michael D. Randle & Shenchu Yin & Keke He & Nargess Arabchigavkani & Ripudaman Dixit & Bilal Barut & Miao Zhao & Harihara Ramamoorthy, 2023. "Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-37292-4
    DOI: 10.1038/s41467-023-37292-4
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    Cited by:

    1. Hualiang Lv & Yuxing Yao & Mingyue Yuan & Guanyu Chen & Yuchao Wang & Longjun Rao & Shucong Li & Ufuoma I. Kara & Robert L. Dupont & Cheng Zhang & Boyuan Chen & Bo Liu & Xiaodi Zhou & Renbing Wu & Sol, 2024. "Functional nanoporous graphene superlattice," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Jong E. Han & Camille Aron & Xi Chen & Ishiaka Mansaray & Jae-Ho Han & Ki-Seok Kim & Michael Randle & Jonathan P. Bird, 2023. "Correlated insulator collapse due to quantum avalanche via in-gap ladder states," Nature Communications, Nature, vol. 14(1), pages 1-8, December.

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