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Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Author

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  • P. Huang

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris
    East China Normal University)

  • E. Riccardi

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • S. Messelot

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • H. Graef

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • F. Valmorra

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • J. Tignon

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • T. Taniguchi

    (National Institute for Materials Science)

  • K. Watanabe

    (National Institute for Materials Science)

  • S. Dhillon

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • B. Plaçais

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • R. Ferreira

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

  • J. Mangeney

    (ENS, Université PSL, CNRS, Sorbonne, Université, Université de Paris)

Abstract

Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristic times for large non-equilibrium carrier densities at high energy. An additional channel has been recently demonstrated in graphene/hBN heterostructures by emission of hBN hyperbolic phonon polaritons (HPhP) with picosecond decay time. Here, we report on carrier lifetimes in graphene/hBN Zener-Klein transistors of ~30 ps for photoexcited carriers at low density and energy, using mid-infrared photoconductivity measurements. We further demonstrate the switching of carrier lifetime from ~30 ps (attributed to interband Auger) down to a few picoseconds upon ignition of HPhP relaxation at finite bias and/or with infrared excitation power. Our study opens interesting perspectives to exploit graphene/hBN heterostructures for THz lasing and highly sensitive THz photodetection as well as for phonon polariton optics.

Suggested Citation

  • P. Huang & E. Riccardi & S. Messelot & H. Graef & F. Valmorra & J. Tignon & T. Taniguchi & K. Watanabe & S. Dhillon & B. Plaçais & R. Ferreira & J. Mangeney, 2020. "Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-14714-1
    DOI: 10.1038/s41467-020-14714-1
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    Cited by:

    1. Jubin Nathawat & Ishiaka Mansaray & Kohei Sakanashi & Naoto Wada & Michael D. Randle & Shenchu Yin & Keke He & Nargess Arabchigavkani & Ripudaman Dixit & Bilal Barut & Miao Zhao & Harihara Ramamoorthy, 2023. "Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene," Nature Communications, Nature, vol. 14(1), pages 1-11, December.

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