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Rapid and up-scalable manufacturing of gigahertz nanogap diodes

Author

Listed:
  • Kalaivanan Loganathan

    (King Abdullah University of Science and Technology (KAUST))

  • Hendrik Faber

    (King Abdullah University of Science and Technology (KAUST))

  • Emre Yengel

    (King Abdullah University of Science and Technology (KAUST))

  • Akmaral Seitkhan

    (King Abdullah University of Science and Technology (KAUST))

  • Azamat Bakytbekov

    (King Abdullah University of Science and Technology (KAUST))

  • Emre Yarali

    (King Abdullah University of Science and Technology (KAUST))

  • Begimai Adilbekova

    (King Abdullah University of Science and Technology (KAUST))

  • Afnan AlBatati

    (King Abdullah University of Science and Technology (KAUST))

  • Yuanbao Lin

    (King Abdullah University of Science and Technology (KAUST))

  • Zainab Felemban

    (King Abdullah University of Science and Technology (KAUST))

  • Shuai Yang

    (King Abdullah University of Science and Technology (KAUST))

  • Weiwei Li

    (King Abdullah University of Science and Technology (KAUST))

  • Dimitra G. Georgiadou

    (University of Southampton)

  • Atif Shamim

    (King Abdullah University of Science and Technology (KAUST))

  • Elefterios Lidorikis

    (University of Ioannina
    University Research Center of Ioannina (URCI), Institute of Materials Science and Computing)

  • Thomas D. Anthopoulos

    (King Abdullah University of Science and Technology (KAUST))

Abstract

The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned 100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.

Suggested Citation

  • Kalaivanan Loganathan & Hendrik Faber & Emre Yengel & Akmaral Seitkhan & Azamat Bakytbekov & Emre Yarali & Begimai Adilbekova & Afnan AlBatati & Yuanbao Lin & Zainab Felemban & Shuai Yang & Weiwei Li , 2022. "Rapid and up-scalable manufacturing of gigahertz nanogap diodes," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-30876-6
    DOI: 10.1038/s41467-022-30876-6
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    References listed on IDEAS

    as
    1. David J. Beesley & James Semple & Lethy Krishnan Jagadamma & Aram Amassian & Martyn A. McLachlan & Thomas D. Anthopoulos & John C. deMello, 2014. "Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography," Nature Communications, Nature, vol. 5(1), pages 1-9, September.
    2. Jiawei Zhang & Yunpeng Li & Binglei Zhang & Hanbin Wang & Qian Xin & Aimin Song, 2015. "Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz," Nature Communications, Nature, vol. 6(1), pages 1-7, November.
    3. Sung Jin Yang & Kyu-Tae Park & Jaeho Im & Sungjae Hong & Yangjin Lee & Byung-Wook Min & Kwanpyo Kim & Seongil Im, 2020. "Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
    Full references (including those not matched with items on IDEAS)

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    Cited by:

    1. Longfei Song & Juliette Cardoletti & Alfredo Blázquez Martínez & Andreja Benčan & Brigita Kmet & Stéphanie Girod & Emmanuel Defay & Sebastjan Glinšek, 2024. "Crystallization of piezoceramic films on glass via flash lamp annealing," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Liang Yang & Hongrong Hu & Alexander Scholz & Florian Feist & Gabriel Cadilha Marques & Steven Kraus & Niklas Maximilian Bojanowski & Eva Blasco & Christopher Barner-Kowollik & Jasmin Aghassi-Hagmann , 2023. "Laser printed microelectronics," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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