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Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

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  • Jiawei Zhang

    (School of Electrical and Electronic Engineering, University of Manchester, Sackville Street Building, Manchester M13 9PL, UK)

  • Yunpeng Li

    (School of Physics, Shandong University)

  • Binglei Zhang

    (School of Physics, Shandong University)

  • Hanbin Wang

    (School of Physics, Shandong University)

  • Qian Xin

    (School of Physics, Shandong University)

  • Aimin Song

    (School of Electrical and Electronic Engineering, University of Manchester, Sackville Street Building, Manchester M13 9PL, UK
    School of Physics, Shandong University)

Abstract

Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium–gallium–zinc–oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

Suggested Citation

  • Jiawei Zhang & Yunpeng Li & Binglei Zhang & Hanbin Wang & Qian Xin & Aimin Song, 2015. "Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz," Nature Communications, Nature, vol. 6(1), pages 1-7, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8561
    DOI: 10.1038/ncomms8561
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    Cited by:

    1. Kalaivanan Loganathan & Hendrik Faber & Emre Yengel & Akmaral Seitkhan & Azamat Bakytbekov & Emre Yarali & Begimai Adilbekova & Afnan AlBatati & Yuanbao Lin & Zainab Felemban & Shuai Yang & Weiwei Li , 2022. "Rapid and up-scalable manufacturing of gigahertz nanogap diodes," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Xiu Fang Lu & Cheng-Ping Zhang & Naizhou Wang & Dan Zhao & Xin Zhou & Weibo Gao & Xian Hui Chen & K. T. Law & Kian Ping Loh, 2024. "Nonlinear transport and radio frequency rectification in BiTeBr at room temperature," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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