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Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Author

Listed:
  • Sung Jin Yang

    (Yonsei University)

  • Kyu-Tae Park

    (Yonsei University)

  • Jaeho Im

    (The University of Michigan)

  • Sungjae Hong

    (Yonsei University)

  • Yangjin Lee

    (Yonsei University)

  • Byung-Wook Min

    (Yonsei University)

  • Kwanpyo Kim

    (Yonsei University)

  • Seongil Im

    (Yonsei University)

Abstract

Ultra-thin two-dimensional semiconducting crystals in their monolayer and few-layer forms show promising aspects in nanoelectronic applications. However, the ultra-thin nature of two-dimensional crystals inevitably results in high contact resistance from limited channel/contact volume as well as device-to-device variability, which seriously limit reliable applications using two-dimensional semiconductors. Here, we incorporate rather thick two-dimensional layered semiconducting crystals for reliable vertical diodes showing excellent Ohmic and Schottky contacts. Using the vertical transport of WSe2, we demonstrate devices which are functional at various frequency ranges from megahertz AM demodulation of audio signals, to gigahertz rectification for fifth-generation wireless electronics, to ultraviolet–visible photodetection. The WSe2 exhibits an excellent Ohmic contact to bottom platinum electrode with record-low contact resistance (~50 Ω) and an exemplary Schottky junction to top transparent conducting oxide electrode. Our semitransparent vertical WSe2 Schottky diodes could be a key component of future high frequency electronics in the era of fifth-generation wireless communication.

Suggested Citation

  • Sung Jin Yang & Kyu-Tae Park & Jaeho Im & Sungjae Hong & Yangjin Lee & Byung-Wook Min & Kwanpyo Kim & Seongil Im, 2020. "Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-15419-1
    DOI: 10.1038/s41467-020-15419-1
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    Cited by:

    1. Kalaivanan Loganathan & Hendrik Faber & Emre Yengel & Akmaral Seitkhan & Azamat Bakytbekov & Emre Yarali & Begimai Adilbekova & Afnan AlBatati & Yuanbao Lin & Zainab Felemban & Shuai Yang & Weiwei Li , 2022. "Rapid and up-scalable manufacturing of gigahertz nanogap diodes," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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