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Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

Author

Listed:
  • Baoshan Tang

    (National University of Singapore)

  • Hasita Veluri

    (National University of Singapore)

  • Yida Li

    (National University of Singapore)

  • Zhi Gen Yu

    (Institute of High Performance Computing)

  • Moaz Waqar

    (National University of Singapore)

  • Jin Feng Leong

    (National University of Singapore)

  • Maheswari Sivan

    (National University of Singapore)

  • Evgeny Zamburg

    (National University of Singapore)

  • Yong-Wei Zhang

    (Institute of High Performance Computing)

  • John Wang

    (National University of Singapore)

  • Aaron V-Y. Thean

    (National University of Singapore)

Abstract

Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS2 memristor arrays are reported. The MoS2 memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS2 memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS2 layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.

Suggested Citation

  • Baoshan Tang & Hasita Veluri & Yida Li & Zhi Gen Yu & Moaz Waqar & Jin Feng Leong & Maheswari Sivan & Evgeny Zamburg & Yong-Wei Zhang & John Wang & Aaron V-Y. Thean, 2022. "Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-30519-w
    DOI: 10.1038/s41467-022-30519-w
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    References listed on IDEAS

    as
    1. Myungsoo Kim & Ruijing Ge & Xiaohan Wu & Xing Lan & Jesse Tice & Jack C. Lee & Deji Akinwande, 2018. "Zero-static power radio-frequency switches based on MoS2 atomristors," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
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    Cited by:

    1. Wenhui Wang & Ke Li & Jun Lan & Mei Shen & Zhongrui Wang & Xuewei Feng & Hongyu Yu & Kai Chen & Jiamin Li & Feichi Zhou & Longyang Lin & Panpan Zhang & Yida Li, 2023. "CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    2. Shengqi Wang & Wenjie Li & Junying Xue & Jifeng Ge & Jing He & Junyang Hou & Yu Xie & Yuan Li & Hao Zhang & Zdeněk Sofer & Zhaoyang Lin, 2024. "A library of 2D electronic material inks synthesized by liquid-metal-assisted intercalation of crystal powders," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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