IDEAS home Printed from https://ideas.repec.org/a/gam/jeners/v14y2021i13p3920-d585665.html
   My bibliography  Save this article

Enhanced Boost Factor for Three-Level Quasi-Switched Boost T-Type Inverter

Author

Listed:
  • Duc-Tri Do

    (Faculty of Electrical and Electronics Engineering, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam)

  • Vinh-Thanh Tran

    (Faculty of Electrical and Electronics Engineering, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam)

  • Minh-Khai Nguyen

    (Faculty of Electrical and Electronics Engineering, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam)

Abstract

A new modulation strategy has been introduced in this paper in order to enhance the boost factor for the three-level quasi-switched boost T-type inverter (3L-qSBT 2 I). Under this approach, the component rating of power devices is significantly decreased. Moreover, the use of a larger boost factor produces a smaller shoot-through current. This benefit leads to reducing the conduction loss significantly. Furthermore, the neutral voltage unbalance is also considered. The duty cycle of two active switches of a quasi-switched boost (qSB) network is redetermined based on actual capacitor voltages to recovery balance condition. Noted that the boost factor will not be affected by the proposed capacitor voltage balance strategy. The proposed method is taken into account to be compared with other previous studies. The operation principle and overall control strategy for this configuration are also detailed. The simulation and experiment are implemented with the help of PSIM software and laboratory prototype to demonstrate the accuracy of this strategy.

Suggested Citation

  • Duc-Tri Do & Vinh-Thanh Tran & Minh-Khai Nguyen, 2021. "Enhanced Boost Factor for Three-Level Quasi-Switched Boost T-Type Inverter," Energies, MDPI, vol. 14(13), pages 1-17, June.
  • Handle: RePEc:gam:jeners:v:14:y:2021:i:13:p:3920-:d:585665
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/1996-1073/14/13/3920/pdf
    Download Restriction: no

    File URL: https://www.mdpi.com/1996-1073/14/13/3920/
    Download Restriction: no
    ---><---

    References listed on IDEAS

    as
    1. Serhii Stepenko & Oleksandr Husev & Dmitri Vinnikov & Carlos Roncero-Clemente & Sergio Pires Pimentel & Elena Santasheva, 2019. "Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications," Energies, MDPI, vol. 12(13), pages 1-17, June.
    2. Vinh-Thanh Tran & Duc-Tri Do & Van-Dung Do & Minh-Khai Nguyen, 2020. "A Three-Level DC-Link Quasi-Switch Boost T-Type Inverter with Voltage Stress Reduction," Energies, MDPI, vol. 13(14), pages 1-20, July.
    Full references (including those not matched with items on IDEAS)

    Most related items

    These are the items that most often cite the same works as this one and are cited by the same works as this one.
    1. Vinh-Thanh Tran & Duc-Tri Do & Van-Dung Do & Minh-Khai Nguyen, 2020. "A Three-Level DC-Link Quasi-Switch Boost T-Type Inverter with Voltage Stress Reduction," Energies, MDPI, vol. 13(14), pages 1-20, July.
    2. Jing Yuan & Yongheng Yang & Frede Blaabjerg, 2020. "A Switched Quasi-Z-Source Inverter with Continuous Input Currents," Energies, MDPI, vol. 13(6), pages 1-12, March.
    3. Lluís Monjo & Luis Sainz & Juan José Mesas & Joaquín Pedra, 2021. "State-Space Model of Quasi-Z-Source Inverter-PV Systems for Transient Dynamics Studies and Network Stability Assessment," Energies, MDPI, vol. 14(14), pages 1-15, July.
    4. Yu Tang & Hao Sun & Shaoheng Wang, 2020. "A Family of High Step-Up Quasi Z-Source Inverters with Coupled Inductor," Energies, MDPI, vol. 13(21), pages 1-14, October.
    5. Lluís Monjo & Luis Sainz & Juan José Mesas & Joaquín Pedra, 2021. "Quasi-Z-Source Inverter-Based Photovoltaic Power System Modeling for Grid Stability Studies," Energies, MDPI, vol. 14(2), pages 1-16, January.
    6. Carlos D. Fuentes & Marcus Müller & Steffen Bernet & Samir Kouro, 2021. "SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter," Energies, MDPI, vol. 14(11), pages 1-20, May.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jeners:v:14:y:2021:i:13:p:3920-:d:585665. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    If CitEc recognized a bibliographic reference but did not link an item in RePEc to it, you can help with this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.