IDEAS home Printed from https://ideas.repec.org/a/gam/jeners/v10y2017i4p452-d94711.html
   My bibliography  Save this article

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

Author

Listed:
  • Asad Fayyaz

    (Power Electronics, Machines and Control Group, University of Nottingham, Nottingham NG7 2RD, UK)

  • Gianpaolo Romano

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Via Claudio 21, 80125 Naples, Italy)

  • Jesus Urresti

    (Emerging Technologies and Materials Group, Newcastle University, Newcastle upon Tyne NE1 7RU, UK)

  • Michele Riccio

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Via Claudio 21, 80125 Naples, Italy)

  • Alberto Castellazzi

    (Power Electronics, Machines and Control Group, University of Nottingham, Nottingham NG7 2RD, UK)

  • Andrea Irace

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Via Claudio 21, 80125 Naples, Italy)

  • Nick Wright

    (Emerging Technologies and Materials Group, Newcastle University, Newcastle upon Tyne NE1 7RU, UK)

Abstract

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy ( E AV ) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.

Suggested Citation

  • Asad Fayyaz & Gianpaolo Romano & Jesus Urresti & Michele Riccio & Alberto Castellazzi & Andrea Irace & Nick Wright, 2017. "A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs," Energies, MDPI, vol. 10(4), pages 1-15, April.
    • Handle: RePEc:gam:jeners:v:10:y:2017:i:4:p:452-:d:94711
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/1996-1073/10/4/452/pdf
    Download Restriction: no
    File URL: https://www.mdpi.com/1996-1073/10/4/452/
    Download Restriction: no
    ---><---

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Vincenzo d’Alessandro & Lorenzo Codecasa & Antonio Pio Catalano & Ciro Scognamillo, 2020. "Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC," Energies, MDPI, vol. 13(17), pages 1-27, September.
    2. HwaPyeong Park & DoKyoung Kim & SeungHo Baek & JeeHoon Jung, 2019. "Extension of Zero Voltage Switching Capability for CLLC Resonant Converter," Energies, MDPI, vol. 12(5), pages 1-14, March.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jeners:v:10:y:2017:i:4:p:452-:d:94711. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.