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Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature

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  • Woo Gyun Shin

    (Photovoltaics Laboratory, New and Renewable Energy Institute, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea)

  • Suk Whan Ko

    (Photovoltaics Laboratory, New and Renewable Energy Institute, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea)

  • Hyung Jun Song

    (Photovoltaics Laboratory, New and Renewable Energy Institute, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
    Department of Safety Engineering, Seoul National University of Science & Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Korea)

  • Young Chul Ju

    (Photovoltaics Laboratory, New and Renewable Energy Institute, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea)

  • Hye Mi Hwang

    (Photovoltaics Laboratory, New and Renewable Energy Institute, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea)

  • Gi Hwan Kang

    (Photovoltaics Laboratory, New and Renewable Energy Institute, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea)

Abstract

Bypass diodes have been widely utilized in crystalline silicon (c-Si) photovoltaic (PV) modules to maximize the output of a PV module array under partially shaded conditions. A Schottky diode is used as the bypass diode in c-Si PV modules due to its low operating voltage. In this work, we systematically investigated the origin of bypass diode faults in c-Si PV modules operated outdoors. The temperature of the inner junction box where the bypass diode is installed increases as the ambient temperature increases. Its temperature rises to over 70 °C on sunny days in summer. As the temperature of the junction box increases from 25 to 70 °C, the leakage current increases up to 35 times under a reverse voltage of 15 V. As a result of the high leakage current of the bypass diode at high temperature, melt down of the junction barrier between the metal and semiconductor has been observed in damaged diodes collected from abnormally functioning PV modules. Thus, it is believed that the constant leakage current applied to the junction caused the melting of the junction, thereby resulting in a failure of both the bypass diode and the c-Si PV module.

Suggested Citation

  • Woo Gyun Shin & Suk Whan Ko & Hyung Jun Song & Young Chul Ju & Hye Mi Hwang & Gi Hwan Kang, 2018. "Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature," Energies, MDPI, vol. 11(9), pages 1-11, September.
    • Handle: RePEc:gam:jeners:v:11:y:2018:i:9:p:2416-:d:169404
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    Cited by:

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