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Enhanced Thermoelectric Properties of Cu 3 SbSe 4 Compounds via Gallium Doping

Author

Listed:
  • Degang Zhao

    (School of Materials Science and Engineering, University of Jinan, Jinan 250022, China)

  • Di Wu

    (School of Materials Science and Engineering, University of Jinan, Jinan 250022, China)

  • Lin Bo

    (School of Materials Science and Engineering, University of Jinan, Jinan 250022, China)

Abstract

In this study, the p -type Ga-doped Cu 3 Sb 1− x Ga x Se 4 compounds were fabricated by melting, annealing, grinding, and spark plasma sintering (SPS). The transport properties of Ga-doped Cu 3 Sb 1− x Ga x Se 4 compounds were investigated. As Ga content increased, the hole concentration of Cu 3 Sb 1− x Ga x Se 4 compounds increased, which led to an increase in electrical conductivity. Meanwhile, the Seebeck coefficient of the Cu 3 Sb 1− x Ga x Se 4 compounds decreased as Ga content increased. The extra phonon scattering originating from Ga-doping effectively depressed the lattice thermal conductivity of the Cu 3 Sb 1− x Ga x Se 4 compounds. The ZT value of Cu 3 SbSe 4 markedly improved, which is primarily ascribed to the depressed lattice thermal conductivity and the increased electrical conductivity. The highest ZT value for the Cu 3 Sb 0.985 Ga 0.015 Se 4 compound was 0.54 at 650 K, which is two times higher than that of a pure Cu 3 SbSe 4 compound.

Suggested Citation

  • Degang Zhao & Di Wu & Lin Bo, 2017. "Enhanced Thermoelectric Properties of Cu 3 SbSe 4 Compounds via Gallium Doping," Energies, MDPI, vol. 10(10), pages 1-9, October.
    • Handle: RePEc:gam:jeners:v:10:y:2017:i:10:p:1524-:d:114169
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    References listed on IDEAS

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    2. Fitriani, & Ovik, R. & Long, B.D. & Barma, M.C. & Riaz, M. & Sabri, M.F.M. & Said, S.M. & Saidur, R., 2016. "A review on nanostructures of high-temperature thermoelectric materials for waste heat recovery," Renewable and Sustainable Energy Reviews, Elsevier, vol. 64(C), pages 635-659.
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