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Temperature changes of I-V characteristics of photovoltaic cells as a consequence of the Fermi energy level shift

Author

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  • Martin Libra
  • Vladislav Poulek

    (Department of Physics, Faculty of Engineering, Czech University of Life Sciences Prague, Prague, Czech Republic)

  • Pavel Kouřím

    (Department of Physics, Faculty of Engineering, Czech University of Life Sciences Prague, Prague, Czech Republic)

Abstract

Current voltage (I-V) characteristic of illuminated photovoltaic (PV) cell varies with temperature changes. The effect is explained according to the solid state theory. The higher the temperature, the lower the open-circuit voltage and the higher the short-circuit current. This behaviour is explained on the basis of band theory of the solid state physics. The increasing temperature causes a narrowing of the forbidden gap and a shift of the Fermi energy level toward the centre of the forbidden gap. Both these effects lead to a reduction of the potential barrier in the band diagram of the illuminated PN junction, and thus to a decrease of the photovoltaic voltage. In addition, narrowing of the forbidden gap causes higher generation of electron-hole pairs in the illuminated PN junction and short-circuit current increases.

Suggested Citation

  • Martin Libra & Vladislav Poulek & Pavel Kouřím, 2017. "Temperature changes of I-V characteristics of photovoltaic cells as a consequence of the Fermi energy level shift," Research in Agricultural Engineering, Czech Academy of Agricultural Sciences, vol. 63(1), pages 10-15.
    • Handle: RePEc:caa:jnlrae:v:63:y:2017:i:1:id:38-2015-rae
    DOI: 10.17221/38/2015-RAE
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    References listed on IDEAS

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    1. Carrero, C. & Ramírez, D. & Rodríguez, J. & Platero, C.A., 2011. "Accurate and fast convergence method for parameter estimation of PV generators based on three main points of the I–V curve," Renewable Energy, Elsevier, vol. 36(11), pages 2972-2977.
    2. Orioli, Aldo & Di Gangi, Alessandra, 2013. "A procedure to calculate the five-parameter model of crystalline silicon photovoltaic modules on the basis of the tabular performance data," Applied Energy, Elsevier, vol. 102(C), pages 1160-1177.
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