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Controlled interlayer exciton ionization in an electrostatic trap in atomically thin heterostructures

Author

Listed:
  • Andrew Y. Joe

    (Harvard University
    University of California)

  • Andrés M. Mier Valdivia

    (Harvard University)

  • Luis A. Jauregui

    (University of California)

  • Kateryna Pistunova

    (Harvard University)

  • Dapeng Ding

    (Harvard University
    Harvard University)

  • You Zhou

    (Harvard University
    Harvard University
    University of Maryland)

  • Giovanni Scuri

    (Harvard University
    Stanford University)

  • Kristiaan De Greve

    (Harvard University
    Harvard University)

  • Andrey Sushko

    (Harvard University)

  • Bumho Kim

    (Columbia University)

  • Takashi Taniguchi

    (National Institute for Materials Science, 1-1 Namiki)

  • Kenji Watanabe

    (National Institute for Materials Science, 1-1 Namiki)

  • James C. Hone

    (Columbia University)

  • Mikhail D. Lukin

    (Harvard University)

  • Hongkun Park

    (Harvard University
    Harvard University)

  • Philip Kim

    (Harvard University
    Harvard University)

Abstract

Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above 2 × 1012 cm−2 can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.

Suggested Citation

  • Andrew Y. Joe & Andrés M. Mier Valdivia & Luis A. Jauregui & Kateryna Pistunova & Dapeng Ding & You Zhou & Giovanni Scuri & Kristiaan De Greve & Andrey Sushko & Bumho Kim & Takashi Taniguchi & Kenji W, 2024. "Controlled interlayer exciton ionization in an electrostatic trap in atomically thin heterostructures," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-51128-9
    DOI: 10.1038/s41467-024-51128-9
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