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Realization of monolayer ZrTe5 topological insulators with wide band gaps

Author

Listed:
  • Yong-Jie Xu

    (Nanjing University)

  • Guohua Cao

    (University of Science and Technology of China)

  • Qi-Yuan Li

    (Nanjing University)

  • Cheng-Long Xue

    (Nanjing University)

  • Wei-Min Zhao

    (Nanjing University)

  • Qi-Wei Wang

    (Nanjing University)

  • Li-Guo Dou

    (Nanjing University)

  • Xuan Du

    (Nanjing University)

  • Yu-Xin Meng

    (Nanjing University)

  • Yuan-Kun Wang

    (Nanjing University)

  • Yu-Hang Gao

    (Nanjing University)

  • Zhen-Yu Jia

    (Nanjing University)

  • Wei Li

    (Chinese Academy of Sciences)

  • Lianlian Ji

    (Chinese Academy of Sciences)

  • Fang-Sen Li

    (Chinese Academy of Sciences)

  • Zhenyu Zhang

    (University of Science and Technology of China
    Hefei National Laboratory)

  • Ping Cui

    (University of Science and Technology of China
    Hefei National Laboratory)

  • Dingyu Xing

    (Nanjing University
    Nanjing University)

  • Shao-Chun Li

    (Nanjing University
    Hefei National Laboratory
    Nanjing University
    Nanjing University)

Abstract

Two-dimensional topological insulators hosting the quantum spin Hall effect have application potential in dissipationless electronics. To observe the quantum spin Hall effect at elevated temperatures, a wide band gap is indispensable to efficiently suppress bulk conduction. Yet, most candidate materials exhibit narrow or even negative band gaps. Here, via elegant control of van der Waals epitaxy, we have successfully grown monolayer ZrTe5 on a bilayer graphene/SiC substrate. The epitaxial ZrTe5 monolayer crystalizes in two allotrope isomers with different intralayer alignments of ZrTe3 prisms. Our scanning tunneling microscopy/spectroscopy characterization unveils an intrinsic full band gap as large as 254 meV and one-dimensional edge states localized along the periphery of the ZrTe5 monolayer. First-principles calculations further confirm that the large band gap originates from strong spin−orbit coupling, and the edge states are topologically nontrivial. These findings thus provide a highly desirable material platform for the exploration of the high-temperature quantum spin Hall effect.

Suggested Citation

  • Yong-Jie Xu & Guohua Cao & Qi-Yuan Li & Cheng-Long Xue & Wei-Min Zhao & Qi-Wei Wang & Li-Guo Dou & Xuan Du & Yu-Xin Meng & Yuan-Kun Wang & Yu-Hang Gao & Zhen-Yu Jia & Wei Li & Lianlian Ji & Fang-Sen L, 2024. "Realization of monolayer ZrTe5 topological insulators with wide band gaps," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-49197-x
    DOI: 10.1038/s41467-024-49197-x
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    References listed on IDEAS

    as
    1. Yekai Song & Chunjing Jia & Hongyu Xiong & Binbin Wang & Zhicheng Jiang & Kui Huang & Jinwoong Hwang & Zhuojun Li & Choongyu Hwang & Zhongkai Liu & Dawei Shen & Jonathan A. Sobota & Patrick Kirchmann , 2023. "Signatures of the exciton gas phase and its condensation in monolayer 1T-ZrTe2," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
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