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In operando cryo-STEM of pulse-induced charge density wave switching in TaS2

Author

Listed:
  • James L. Hart

    (Cornell University)

  • Saif Siddique

    (Cornell University)

  • Noah Schnitzer

    (Cornell University)

  • Stephen D. Funni

    (Cornell University)

  • Lena F. Kourkoutis

    (Cornell University
    Cornell University)

  • Judy J. Cha

    (Cornell University)

Abstract

The charge density wave material 1T-TaS2 exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS2 devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS2 device within a scanning transmission electron microscope at cryogenic temperature, and directly visualize the changing charge density wave structure with nanoscale spatial resolution and down to 300 μs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to the nearly commensurate and incommensurate charge density wave phases, depending on the applied voltage amplitude. With our in operando cryogenic electron microscopy experiments, we directly correlate the charge density wave structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS2 devices, critical for engineering reliable and scalable TaS2 electronics.

Suggested Citation

  • James L. Hart & Saif Siddique & Noah Schnitzer & Stephen D. Funni & Lena F. Kourkoutis & Judy J. Cha, 2023. "In operando cryo-STEM of pulse-induced charge density wave switching in TaS2," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-44093-2
    DOI: 10.1038/s41467-023-44093-2
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    References listed on IDEAS

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    1. D. L. Medlin & N. Yang & C. D. Spataru & L. M. Hale & Y. Mishin, 2019. "Unraveling the dislocation core structure at a van der Waals gap in bismuth telluride," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    2. Madeline Winkle & Isaac M. Craig & Stephen Carr & Medha Dandu & Karen C. Bustillo & Jim Ciston & Colin Ophus & Takashi Taniguchi & Kenji Watanabe & Archana Raja & Sinéad M. Griffin & D. Kwabena Bediak, 2023. "Rotational and dilational reconstruction in transition metal dichalcogenide moiré bilayers," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    3. I. Vaskivskyi & I. A. Mihailovic & S. Brazovskii & J. Gospodaric & T. Mertelj & D. Svetin & P. Sutar & D. Mihailovic, 2016. "Fast electronic resistance switching involving hidden charge density wave states," Nature Communications, Nature, vol. 7(1), pages 1-6, September.
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