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Room-temperature high-speed electrical modulation of excitonic distribution in a monolayer semiconductor

Author

Listed:
  • Guangpeng Zhu

    (Soochow University)

  • Lan Zhang

    (Soochow University)

  • Wenfei Li

    (Soochow University)

  • Xiuqi Shi

    (Soochow University)

  • Zhen Zou

    (Soochow University)

  • Qianqian Guo

    (Soochow University)

  • Xiang Li

    (Soochow University)

  • Weigao Xu

    (Nanjing University)

  • Jiansheng Jie

    (Soochow University)

  • Tao Wang

    (Soochow University)

  • Wei Du

    (Soochow University)

  • Qihua Xiong

    (Tsinghua University
    Frontier Science Center for Quantum Information
    Beijing Academy of Quantum Information Sciences
    Collaborative Innovation Center of Quantum Matter)

Abstract

Excitons in monolayer semiconductors, benefitting from their large binding energies, hold great potential towards excitonic circuits bridging nano-electronics and photonics. However, achieving room-temperature ultrafast on-chip electrical modulation of excitonic distribution and flow in monolayer semiconductors is nontrivial. Here, utilizing lateral bias, we report high-speed electrical modulation of the excitonic distribution in a monolayer semiconductor junction at room temperature. The alternating charge trapping/detrapping at the two monolayer/electrode interfaces induces a non-uniform carrier distribution, leading to controlled in-plane spatial variations of excitonic populations, and mimicking a bias-driven excitonic flow. This modulation increases with the bias amplitude and eventually saturates, relating to the energetic distribution of trap density of states. The switching time of the modulation is down to 5 ns, enabling high-speed excitonic devices. Our findings reveal the trap-assisted exciton engineering in monolayer semiconductors and offer great opportunities for future two-dimensional excitonic devices and circuits.

Suggested Citation

  • Guangpeng Zhu & Lan Zhang & Wenfei Li & Xiuqi Shi & Zhen Zou & Qianqian Guo & Xiang Li & Weigao Xu & Jiansheng Jie & Tao Wang & Wei Du & Qihua Xiong, 2023. "Room-temperature high-speed electrical modulation of excitonic distribution in a monolayer semiconductor," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-42568-w
    DOI: 10.1038/s41467-023-42568-w
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    References listed on IDEAS

    as
    1. Gerasimos Konstantatos & Ian Howard & Armin Fischer & Sjoerd Hoogland & Jason Clifford & Ethan Klem & Larissa Levina & Edward H. Sargent, 2006. "Ultrasensitive solution-cast quantum dot photodetectors," Nature, Nature, vol. 442(7099), pages 180-183, July.
    2. Jason S. Ross & Sanfeng Wu & Hongyi Yu & Nirmal J. Ghimire & Aaron M. Jones & Grant Aivazian & Jiaqiang Yan & David G. Mandrus & Di Xiao & Wang Yao & Xiaodong Xu, 2013. "Electrical control of neutral and charged excitons in a monolayer semiconductor," Nature Communications, Nature, vol. 4(1), pages 1-6, June.
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    1. Hyeongwoo Lee & Sujeong Kim & Seonhye Eom & Gangseon Ji & Soo Ho Choi & Huitae Joo & Jinhyuk Bae & Ki Kang Kim & Vasily Kravtsov & Hyeong-Ryeol Park & Kyoung-Duck Park, 2024. "Quantum tunneling high-speed nano-excitonic modulator," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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