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High-lying valley-polarized trions in 2D semiconductors

Author

Listed:
  • Kai-Qiang Lin

    (University of Regensburg)

  • Jonas D. Ziegler

    (Technische Universität Dresden)

  • Marina A. Semina

    (Ioffe Institute)

  • Javid V. Mamedov

    (National Research University, Higher School of Economics)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Sebastian Bange

    (University of Regensburg)

  • Alexey Chernikov

    (Technische Universität Dresden)

  • Mikhail M. Glazov

    (Ioffe Institute
    National Research University, Higher School of Economics)

  • John M. Lupton

    (University of Regensburg)

Abstract

Optoelectronic functionalities of monolayer transition-metal dichalcogenide (TMDC) semiconductors are characterized by the emergence of externally tunable, correlated many-body complexes arising from strong Coulomb interactions. However, the vast majority of such states susceptible to manipulation has been limited to the region in energy around the fundamental bandgap. We report the observation of tightly bound, valley-polarized, UV-emissive trions in monolayer TMDC transistors: quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. These high-lying trions have markedly different optical selection rules compared to band-edge trions and show helicity opposite to that of the excitation. An electrical gate controls both the oscillator strength and the detuning of the excitonic transitions, and therefore the Rabi frequency of the strongly driven three-level system, enabling excitonic quantum interference to be switched on and off in a deterministic fashion.

Suggested Citation

  • Kai-Qiang Lin & Jonas D. Ziegler & Marina A. Semina & Javid V. Mamedov & Kenji Watanabe & Takashi Taniguchi & Sebastian Bange & Alexey Chernikov & Mikhail M. Glazov & John M. Lupton, 2022. "High-lying valley-polarized trions in 2D semiconductors," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-33939-w
    DOI: 10.1038/s41467-022-33939-w
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