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Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Author

Listed:
  • Jia-nan Liu

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Xu Yang

    (Institute of Physics Chinese Academy of Sciences
    Songshan Lake Materials Laboratory)

  • Haopu Xue

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Xue-song Gai

    (Institute of Physics Chinese Academy of Sciences)

  • Rui Sun

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yang Li

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Zi-Zhao Gong

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Na Li

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Zong-Kai Xie

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Wei He

    (Institute of Physics Chinese Academy of Sciences)

  • Xiang-Qun Zhang

    (Institute of Physics Chinese Academy of Sciences)

  • Desheng Xue

    (Lanzhou University)

  • Zhao-Hua Cheng

    (Institute of Physics Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory)

Abstract

Single-particle band theory has been very successful in describing the band structure of topological insulators. However, with decreasing thickness of topological insulator thin films, single-particle band theory is insufficient to explain their band structures and transport properties due to the existence of top and bottom surface-state coupling. Here, we reconstruct this coupling with an equivalently screened Coulomb interaction in Bi2Se3 ultrathin films. The thickness-dependent position of the Dirac point and the magnitude of the mass gap are discussed in terms of the Hartree approximation and the self-consistent gap equation. We find that for thicknesses below 6 quintuple layers, the magnitude of the mass gap is in good agreement with the experimental results. Our work provides a more accurate means of describing and predicting the behaviour of quasi-particles in ultrathin topological insulator films and stacked topological systems.

Suggested Citation

  • Jia-nan Liu & Xu Yang & Haopu Xue & Xue-song Gai & Rui Sun & Yang Li & Zi-Zhao Gong & Na Li & Zong-Kai Xie & Wei He & Xiang-Qun Zhang & Desheng Xue & Zhao-Hua Cheng, 2023. "Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction," Nature Communications, Nature, vol. 14(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40035-0
    DOI: 10.1038/s41467-023-40035-0
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    References listed on IDEAS

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    1. A. R. Mellnik & J. S. Lee & A. Richardella & J. L. Grab & P. J. Mintun & M. H. Fischer & A. Vaezi & A. Manchon & E.-A. Kim & N. Samarth & D. C. Ralph, 2014. "Spin-transfer torque generated by a topological insulator," Nature, Nature, vol. 511(7510), pages 449-451, July.
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