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Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Author

Listed:
  • Felix Risch

    (Nanoelectronic Devices Laboratory (NanoLab), Ecole Polytechnique Fédérale de Lausanne (EPFL))

  • Yuri Tikhonov

    (University of Picardie)

  • Igor Lukyanchuk

    (University of Picardie)

  • Adrian M. Ionescu

    (Nanoelectronic Devices Laboratory (NanoLab), Ecole Polytechnique Fédérale de Lausanne (EPFL))

  • Igor Stolichnov

    (Nanoelectronic Devices Laboratory (NanoLab), Ecole Polytechnique Fédérale de Lausanne (EPFL))

Abstract

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180° domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O3. These electrically erasable/rewritable channels show currents of tens of nanoamperes (200 to 400 nA/μm) at voltages ≤2 V and metallic-like non thermally-activated transport properties down to 4 K, as confirmed by nanoscopic mapping. The domain structure analysis and phase-field simulations reveal complex switching dynamics, in which the extraordinary conductivity in strained Pb(Zr,Ti)O3 films is explained by an interplay between ferroelastic a- and c-domains. This work demonstrates the potential of accessible and stable arrangements of nominally uncharged and electrically switchable domain walls for nanoelectronics.

Suggested Citation

  • Felix Risch & Yuri Tikhonov & Igor Lukyanchuk & Adrian M. Ionescu & Igor Stolichnov, 2022. "Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34777-6
    DOI: 10.1038/s41467-022-34777-6
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    1. Haoying Sun & Jierong Wang & Yushu Wang & Changqing Guo & Jiahui Gu & Wei Mao & Jiangfeng Yang & Yuwei Liu & Tingting Zhang & Tianyi Gao & Hanyu Fu & Tingjun Zhang & Yufeng Hao & Zhengbin Gu & Peng Wa, 2022. "Nonvolatile ferroelectric domain wall memory integrated on silicon," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
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