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In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Author

Listed:
  • Xiangbin Cai

    (South China Normal University
    Nanyang Technological University)

  • Chao Chen

    (South China Normal University)

  • Lin Xie

    (Southern University of Science and Technology)

  • Changan Wang

    (Institute of Ion Beam Physics and Materials Research
    Guangdong Mechanical and Electrical Polytechnic)

  • Zixin Gui

    (South China Normal University)

  • Yuan Gao

    (Peking University)

  • Ulrich Kentsch

    (Institute of Ion Beam Physics and Materials Research)

  • Guofu Zhou

    (South China Normal University)

  • Xingsen Gao

    (South China Normal University)

  • Yu Chen

    (Chinese Academy of Sciences)

  • Shengqiang Zhou

    (Institute of Ion Beam Physics and Materials Research)

  • Weibo Gao

    (Nanyang Technological University)

  • Jun-Ming Liu

    (South China Normal University
    Nanjing University)

  • Ye Zhu

    (The Hong Kong Polytechnic University)

  • Deyang Chen

    (South China Normal University)

Abstract

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.

Suggested Citation

  • Xiangbin Cai & Chao Chen & Lin Xie & Changan Wang & Zixin Gui & Yuan Gao & Ulrich Kentsch & Guofu Zhou & Xingsen Gao & Yu Chen & Shengqiang Zhou & Weibo Gao & Jun-Ming Liu & Ye Zhu & Deyang Chen, 2023. "In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-44091-4
    DOI: 10.1038/s41467-023-44091-4
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    References listed on IDEAS

    as
    1. Tomas Sluka & Alexander K. Tagantsev & Petr Bednyakov & Nava Setter, 2013. "Free-electron gas at charged domain walls in insulating BaTiO3," Nature Communications, Nature, vol. 4(1), pages 1-6, October.
    2. Zhongran Liu & Han Wang & Ming Li & Lingling Tao & Tula R. Paudel & Hongyang Yu & Yuxuan Wang & Siyuan Hong & Meng Zhang & Zhaohui Ren & Yanwu Xie & Evgeny Y. Tsymbal & Jingsheng Chen & Ze Zhang & He , 2023. "In-plane charged domain walls with memristive behaviour in a ferroelectric film," Nature, Nature, vol. 613(7945), pages 656-661, January.
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