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Nonvolatile ferroelectric domain wall memory integrated on silicon

Author

Listed:
  • Haoying Sun

    (Nanjing University
    Nanjing University)

  • Jierong Wang

    (Nanjing University
    Nanjing University)

  • Yushu Wang

    (Nanjing University
    Nanjing University)

  • Changqing Guo

    (University of Warwick)

  • Jiahui Gu

    (Nanjing University
    Nanjing University)

  • Wei Mao

    (Nanjing University
    Nanjing University)

  • Jiangfeng Yang

    (Nanjing University
    Nanjing University)

  • Yuwei Liu

    (Nanjing University
    Nanjing University)

  • Tingting Zhang

    (Nanjing University
    Nanjing University)

  • Tianyi Gao

    (Nanjing University
    Nanjing University)

  • Hanyu Fu

    (Nanjing University
    Nanjing University)

  • Tingjun Zhang

    (Nanjing University
    Nanjing University)

  • Yufeng Hao

    (Nanjing University
    Nanjing University)

  • Zhengbin Gu

    (Nanjing University
    Nanjing University)

  • Peng Wang

    (University of Warwick)

  • Houbing Huang

    (Beijing Institute of Technology)

  • Yuefeng Nie

    (Nanjing University
    Nanjing University)

Abstract

Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories.

Suggested Citation

  • Haoying Sun & Jierong Wang & Yushu Wang & Changqing Guo & Jiahui Gu & Wei Mao & Jiangfeng Yang & Yuwei Liu & Tingting Zhang & Tianyi Gao & Hanyu Fu & Tingjun Zhang & Yufeng Hao & Zhengbin Gu & Peng Wa, 2022. "Nonvolatile ferroelectric domain wall memory integrated on silicon," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31763-w
    DOI: 10.1038/s41467-022-31763-w
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    Cited by:

    1. Xinrui Yang & Lu Han & Hongkai Ning & Shaoqing Xu & Bo Hao & Yi-Chi Li & Taotao Li & Yuan Gao & Shengjun Yan & Yueying Li & Chenyi Gu & Weisheng Li & Zhengbin Gu & Yingzhuo Lun & Yi Shi & Jian Zhou & , 2024. "Ultralow-pressure-driven polarization switching in ferroelectric membranes," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Felix Risch & Yuri Tikhonov & Igor Lukyanchuk & Adrian M. Ionescu & Igor Stolichnov, 2022. "Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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