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Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape

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  • Abderrahime Sekkat

    (Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP
    Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LaHC
    Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMAP)

  • Maciej Oskar Liedke

    (Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf)

  • Viet Huong Nguyen

    (Phenikaa University)

  • Maik Butterling

    (Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf)

  • Federico Baiutti

    (Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1)

  • Juan de Dios Sirvent Veru

    (Catalonia Institute for Energy Research (IREC), Jardins de Les Dones de Negre 1)

  • Matthieu Weber

    (Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP)

  • Laetitia Rapenne

    (Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP)

  • Daniel Bellet

    (Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP)

  • Guy Chichignoud

    (Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMAP)

  • Anne Kaminski-Cachopo

    (Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LaHC)

  • Eric Hirschmann

    (Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf)

  • Andreas Wagner

    (Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf)

  • David Muñoz-Rojas

    (Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP)

Abstract

Cuprous oxide (Cu2O) is a promising p-type semiconductor material for many applications. So far, the lowest resistivity values are obtained for films deposited by physical methods and/or at high temperatures (~1000 °C), limiting their mass integration. Here, Cu2O thin films with ultra-low resistivity values of 0.4 Ω.cm were deposited at only 260 °C by atmospheric pressure spatial atomic layer deposition, a scalable chemical approach. The carrier concentration (7.1014−2.1018 cm−3), mobility (1–86 cm2/V.s), and optical bandgap (2.2–2.48 eV) are easily tuned by adjusting the fraction of oxygen used during deposition. The properties of the films are correlated to the defect landscape, as revealed by a combination of techniques (positron annihilation spectroscopy (PAS), Raman spectroscopy and photoluminescence). Our results reveal the existence of large complex defects and the decrease of the overall defect concentration in the films with increasing oxygen fraction used during deposition.

Suggested Citation

  • Abderrahime Sekkat & Maciej Oskar Liedke & Viet Huong Nguyen & Maik Butterling & Federico Baiutti & Juan de Dios Sirvent Veru & Matthieu Weber & Laetitia Rapenne & Daniel Bellet & Guy Chichignoud & An, 2022. "Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-32943-4
    DOI: 10.1038/s41467-022-32943-4
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    References listed on IDEAS

    as
    1. Geoffroy Hautier & Anna Miglio & Gerbrand Ceder & Gian-Marco Rignanese & Xavier Gonze, 2013. "Identification and design principles of low hole effective mass p-type transparent conducting oxides," Nature Communications, Nature, vol. 4(1), pages 1-7, October.
    2. Linfeng Pan & Yuhang Liu & Liang Yao & Ren & Kevin Sivula & Michael Grätzel & Anders Hagfeldt, 2020. "Cu2O photocathodes with band-tail states assisted hole transport for standalone solar water splitting," Nature Communications, Nature, vol. 11(1), pages 1-10, December.
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