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Highly sensitive strain sensors based on piezotronic tunneling junction

Author

Listed:
  • Qiuhong Yu

    (Xidian University
    Lanzhou University)

  • Rui Ge

    (Xidian University)

  • Juan Wen

    (Lanzhou University)

  • Tao Du

    (Xidian University)

  • Junyi Zhai

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Shuhai Liu

    (Lanzhou University)

  • Longfei Wang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yong Qin

    (Lanzhou University)

Abstract

Piezotronics with capacity of constructing adaptive and seamless interactions between electronics/machines and human/ambient are of value in Internet of Things, artificial intelligence and biomedical engineering. Here, we report a kind of highly sensitive strain sensor based on piezotronic tunneling junction (Ag/HfO2/n-ZnO), which utilizes the strain-induced piezoelectric potential to control the tunneling barrier height and width in parallel, and hence to synergistically modulate the electrical transport process. The piezotronic tunneling strain sensor has a high on/off ratio of 478.4 and high gauge factor of 4.8 × 105 at the strain of 0.10%, which is more than 17.8 times larger than that of a conventional Schottky-barrier based strain sensor in control group as well as some existing ZnO nanowire or nanobelt based sensors. This work provides in-depth understanding for the basic mechanism of piezotronic modulation on tunneling junction, and realizes the highly sensitive strain sensor of piezotronic tunneling junction on device scale, which has great potential in advanced micro/nano-electromechanical devices and systems.

Suggested Citation

  • Qiuhong Yu & Rui Ge & Juan Wen & Tao Du & Junyi Zhai & Shuhai Liu & Longfei Wang & Yong Qin, 2022. "Highly sensitive strain sensors based on piezotronic tunneling junction," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-28443-0
    DOI: 10.1038/s41467-022-28443-0
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    References listed on IDEAS

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    Cited by:

    1. Rui Ge & Qiuhong Yu & Feng Zhou & Shuhai Liu & Yong Qin, 2023. "Dual-modal piezotronic transistor for highly sensitive vertical force sensing and lateral strain sensing," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    2. Qiuhong Yu & Rui Ge & Juan Wen & Qi Xu & Zhouguang Lu & Shuhai Liu & Yong Qin, 2024. "Electric pulse-tuned piezotronic effect for interface engineering," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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