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Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions

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  • Fei Xue

    (Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University
    Physical Science and Engineering Division, King Abdullah University of Science and Technology)

  • Xin He

    (Physical Science and Engineering Division, King Abdullah University of Science and Technology)

  • Yinchang Ma

    (Physical Science and Engineering Division, King Abdullah University of Science and Technology)

  • Dongxing Zheng

    (Physical Science and Engineering Division, King Abdullah University of Science and Technology)

  • Chenhui Zhang

    (Physical Science and Engineering Division, King Abdullah University of Science and Technology)

  • Lain-Jong Li

    (Physical Science and Engineering Division, King Abdullah University of Science and Technology)

  • Jr-Hau He

    (Department of Materials Science and Engineering, City University of Hong Kong)

  • Bin Yu

    (Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University)

  • Xixiang Zhang

    (Physical Science and Engineering Division, King Abdullah University of Science and Technology)

Abstract

Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their resistance switching mechanisms are phenomenally postulated as the modulation of carrier transport by polarization control over Schottky barriers. However, for over a decade, obtaining direct, comprehensive experimental evidence has remained scarce. Here, we report an approach to experimentally demonstrate the origin of ferroelectric resistance switching using planar van der Waals ferroelectric α-In2Se3 memristors. Through rational interfacial engineering, their initial Schottky barrier heights and polarization screening charges at both terminals can be delicately manipulated. This enables us to find that ferroelectric resistance switching is determined by three independent variables: ferroelectric polarization, Schottky barrier variation, and initial barrier height, as opposed to the generally reported explanation. Inspired by these findings, we demonstrate volatile and nonvolatile ferroelectric memristors with large on/off ratios above 104. Our work can be extended to other planar long-channel and vertical ultrashort-channel ferroelectric memristors to reveal their ferroelectric resistance switching regimes and improve their performances.

Suggested Citation

  • Fei Xue & Xin He & Yinchang Ma & Dongxing Zheng & Chenhui Zhang & Lain-Jong Li & Jr-Hau He & Bin Yu & Xixiang Zhang, 2021. "Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27617-6
    DOI: 10.1038/s41467-021-27617-6
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    References listed on IDEAS

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    1. Sören Boyn & Julie Grollier & Gwendal Lecerf & Bin Xu & Nicolas Locatelli & Stéphane Fusil & Stéphanie Girod & Cécile Carrétéro & Karin Garcia & Stéphane Xavier & Jean Tomas & Laurent Bellaiche & Manu, 2017. "Learning through ferroelectric domain dynamics in solid-state synapses," Nature Communications, Nature, vol. 8(1), pages 1-7, April.
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