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On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Author

Listed:
  • Loizos Efthymiou

    (Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK)

  • Gianluca Camuso

    (Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK)

  • Giorgia Longobardi

    (Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK)

  • Terry Chien

    (Vishay General Semiconductor, Taipei 23145, Taiwan)

  • Max Chen

    (Vishay General Semiconductor, Taipei 23145, Taiwan)

  • Florin Udrea

    (Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK)

Abstract

With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed.

Suggested Citation

  • Loizos Efthymiou & Gianluca Camuso & Giorgia Longobardi & Terry Chien & Max Chen & Florin Udrea, 2017. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs," Energies, MDPI, vol. 10(3), pages 1-11, March.
    • Handle: RePEc:gam:jeners:v:10:y:2017:i:3:p:407-:d:93639
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    Citations

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    Cited by:

    1. HwaPyeong Park & DoKyoung Kim & SeungHo Baek & JeeHoon Jung, 2019. "Extension of Zero Voltage Switching Capability for CLLC Resonant Converter," Energies, MDPI, vol. 12(5), pages 1-14, March.
    2. Yajing Zhang & Jianguo Li & Jiuhe Wang & Trillion Q. Zheng & Pengyu Jia, 2022. "Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application," Energies, MDPI, vol. 15(20), pages 1-12, October.
    3. Enrico Bottaro & Santi Agatino Rizzo & Nunzio Salerno, 2022. "Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review," Energies, MDPI, vol. 15(9), pages 1-32, May.

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