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High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

Author

Listed:
  • Radin Za’im

    (Department of Electrical Electronics and System, Faculty of Engineering and Built Environment, National University of Malaysia, Bangi 43600, Malaysia
    UM Power Energy Dedicated Advanced Centre, University of Malaya, Kuala Lumpur 59990, Malaysia)

  • Jafferi Jamaludin

    (UM Power Energy Dedicated Advanced Centre, University of Malaya, Kuala Lumpur 59990, Malaysia)

  • Yushaizad Yusof

    (Department of Electrical Electronics and System, Faculty of Engineering and Built Environment, National University of Malaysia, Bangi 43600, Malaysia)

  • Nasrudin Abd Rahim

    (UM Power Energy Dedicated Advanced Centre, University of Malaya, Kuala Lumpur 59990, Malaysia)

Abstract

This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, commercially available GaN is limited to only a 650 V absolute voltage rating. Such a limitation is challenging in high step-up flyback applications due to the secondary leakage. The leakage imposes high voltage stress on the secondary GaN rectifier during its turn-off transient. Such stress may cause irreversible damage to the GaN device. A new method of leakage bypass is presented to mitigate the high voltage stress issue. The experimental results suggest that when compared to conventional secondary active clamp, a 2.3-fold reduction in overshoot voltage stress percentage is achievable with the technique. As a result, it is possible to utilize GaN as the rectifier while keeping the peak voltage stress within the 650 V limitation with the technique.

Suggested Citation

  • Radin Za’im & Jafferi Jamaludin & Yushaizad Yusof & Nasrudin Abd Rahim, 2022. "High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier," Energies, MDPI, vol. 15(14), pages 1-34, July.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:14:p:5092-:d:861216
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    References listed on IDEAS

    as
    1. Dong Yan & Lijun Hang & Yuanbin He & Zhen He & Pingliang Zeng, 2022. "An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters," Energies, MDPI, vol. 15(8), pages 1-18, April.
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