Author
Listed:
- Chenhao Gao
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China
Chenhao Gao and Keyi Zhong contributed equally to this work.)
- Keyi Zhong
(School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China
Chenhao Gao and Keyi Zhong contributed equally to this work.)
- Xuan Fang
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China
School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China)
- Dan Fang
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China)
- Hongbin Zhao
(State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China)
- Dengkui Wang
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China)
- Bobo Li
(College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China)
- Yingjiao Zhai
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China)
- Xueying Chu
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China)
- Jinhua Li
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China)
- Xiaohua Wang
(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China)
Abstract
As a typical wide bandgap semiconductor, ZnO has received a great deal of attention from researchers because of its strong physicochemical characteristics. During the past few years, great progress has been made in the optoelectronic applications of ZnO, particularly in the photocatalysis and photodetection fields. To enable further improvements in the material’s optoelectronic performance, construction of a variety of ZnO-based composite structures will be essential. In this paper, we review recent progress in the growth of different ZnO–graphene nanocomposite structures. The related band structures and photocatalysis and photoresponse properties of these nanocomposites are discussed. Additionally, specific examples of the materials are included to provide an insight into the common general physical properties and carrier transport characteristics involved in these unique nanocomposite structures. Finally, further directions for the development of ZnO–graphene nanocomposite materials are forecasted.
Suggested Citation
Chenhao Gao & Keyi Zhong & Xuan Fang & Dan Fang & Hongbin Zhao & Dengkui Wang & Bobo Li & Yingjiao Zhai & Xueying Chu & Jinhua Li & Xiaohua Wang, 2021.
"Brief Review of Photocatalysis and Photoresponse Properties of ZnO–Graphene Nanocomposites,"
Energies, MDPI, vol. 14(19), pages 1-25, October.
Handle:
RePEc:gam:jeners:v:14:y:2021:i:19:p:6403-:d:651074
Download full text from publisher
References listed on IDEAS
- Xi Liu & Leilei Gu & Qianpeng Zhang & Jiyuan Wu & Yunze Long & Zhiyong Fan, 2014.
"All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity,"
Nature Communications, Nature, vol. 5(1), pages 1-9, September.
- Rupa Haldavnekar & Krishnan Venkatakrishnan & Bo Tan, 2018.
"Non plasmonic semiconductor quantum SERS probe as a pathway for in vitro cancer detection,"
Nature Communications, Nature, vol. 9(1), pages 1-18, December.
Full references (including those not matched with items on IDEAS)
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