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Design and Implementation of a Control Method for GaN-Based Totem-Pole Boost-Type PFC Rectifier in Energy Storage Systems

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Listed:
  • Nguyen-Nghia Do

    (Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan)

  • Bing-Siang Huang

    (Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan)

  • Nhat-Truong Phan

    (Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan)

  • Tan-Tung Nguyen

    (Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan)

  • Jian-Hong Wu

    (Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan)

  • Yu-Chen Liu

    (Department of Electrical Engineering, National ILAN University, Yilan 260, Taiwan)

  • Huang-Jen Chiu

    (Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan)

Abstract

With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Q rr and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on the design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode gallium nitride field-effect transistors (eGaN FETs), not only to simplify the control implementation but also to achieve high power quality and efficiency. The converter is designed to convert a 90–264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC reaches 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) attains 1.52% while the power factor gains 0.9985.

Suggested Citation

  • Nguyen-Nghia Do & Bing-Siang Huang & Nhat-Truong Phan & Tan-Tung Nguyen & Jian-Hong Wu & Yu-Chen Liu & Huang-Jen Chiu, 2020. "Design and Implementation of a Control Method for GaN-Based Totem-Pole Boost-Type PFC Rectifier in Energy Storage Systems," Energies, MDPI, vol. 13(23), pages 1-18, November.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:23:p:6297-:d:453242
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    References listed on IDEAS

    as
    1. Jinqi Liu & Yizhou Liu & Yuan Zhuang & Cong Wang, 2018. "Analysis to Input Current Zero Crossing Distortion of Bridgeless Rectifier Operating under Different Power Factors," Energies, MDPI, vol. 11(9), pages 1-16, September.
    2. Hannan, M.A. & Lipu, M.S. Hossain & Ker, Pin Jern & Begum, R.A. & Agelidis, Vasilios G. & Blaabjerg, F., 2019. "Power electronics contribution to renewable energy conversion addressing emission reduction: Applications, issues, and recommendations," Applied Energy, Elsevier, vol. 251(C), pages 1-1.
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