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A Thermoelectric Performance Study of Layered Bi 2 TeI Weak Topological Insulator Materials

Author

Listed:
  • Kaihua Tu

    (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

  • Ping Wei

    (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

  • Hongyu Zhou

    (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

  • Xin Mu

    (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

  • Wanting Zhu

    (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

  • Xiaolei Nie

    (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

  • Wenyu Zhao

    (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

Abstract

Topological insulators have been considered as promising thermoelectric materials because of their high electrical transport properties and low thermal conductivity. In this work, the crystal structure, chemical composition, and thermoelectric transport properties of a weak topological insulator, Bi 2 TeI, were studied. Bi 2 TeI possesses the lowest lattice thermal conductivity compared with the analogously layered compounds Bi 2 Te 3 and BiTeI. Cu and Zn were used as dopants with the aim of optimizing the thermoelectric performance. It was found that doping Bi 2 TeI with Cu led to decreased carrier concentration and power factor while doping with Zn resulted in increased carrier concentration and improved power factor. Accompanied with reduced lattice thermal conductivity, Zn-doped samples showed a largely improved dimensionless figure of merit, ZT . The largest ZT was 0.077 for Zn 0.01 Bi 2 TeI, increased by 70% as compared with the undoped Bi 2 TeI.

Suggested Citation

  • Kaihua Tu & Ping Wei & Hongyu Zhou & Xin Mu & Wanting Zhu & Xiaolei Nie & Wenyu Zhao, 2018. "A Thermoelectric Performance Study of Layered Bi 2 TeI Weak Topological Insulator Materials," Energies, MDPI, vol. 11(4), pages 1-11, April.
    • Handle: RePEc:gam:jeners:v:11:y:2018:i:4:p:891-:d:140494
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    References listed on IDEAS

    as
    1. Wenyu Zhao & Zhiyuan Liu & Zhigang Sun & Qingjie Zhang & Ping Wei & Xin Mu & Hongyu Zhou & Cuncheng Li & Shifang Ma & Danqi He & Pengxia Ji & Wanting Zhu & Xiaolei Nie & Xianli Su & Xinfeng Tang & Bao, 2017. "Superparamagnetic enhancement of thermoelectric performance," Nature, Nature, vol. 549(7671), pages 247-251, September.
    2. Rama Venkatasubramanian & Edward Siivola & Thomas Colpitts & Brooks O'Quinn, 2001. "Thin-film thermoelectric devices with high room-temperature figures of merit," Nature, Nature, vol. 413(6856), pages 597-602, October.
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