Ballistic two-dimensional InSe transistors
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DOI: 10.1038/s41586-023-05819-w
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Cited by:
- Haihui Lan & Luyang Wang & Runze He & Shuyi Huang & Jinqiu Yu & Jinming Guo & Jingrui Luo & Yiling Li & Jinyang Zhang & Jiaxin Lin & Shunping Zhang & Mengqi Zeng & Lei Fu, 2023. "2D quasi-layered material with domino structure," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
- Luying Song & Ying Zhao & Bingqian Xu & Ruofan Du & Hui Li & Wang Feng & Junbo Yang & Xiaohui Li & Zijia Liu & Xia Wen & Yanan Peng & Yuzhu Wang & Hang Sun & Ling Huang & Yulin Jiang & Yao Cai & Xue J, 2024. "Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
- Mengshi Yu & Congwei Tan & Yuling Yin & Junchuan Tang & Xiaoyin Gao & Hongtao Liu & Feng Ding & Hailin Peng, 2024. "Integrated 2D multi-fin field-effect transistors," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
- Jiabiao Chen & Zhaochao Liu & Xinyue Dong & Zhansheng Gao & Yuxuan Lin & Yuyu He & Yingnan Duan & Tonghuai Cheng & Zhengyang Zhou & Huixia Fu & Feng Luo & Jinxiong Wu, 2023. "Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
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