IDEAS home Printed from https://ideas.repec.org/a/nat/nature/v613y2023i7943d10.1038_s41586-022-05431-4.html
   My bibliography  Save this article

Approaching the quantum limit in two-dimensional semiconductor contacts

Author

Listed:
  • Weisheng Li

    (Nanjing University)

  • Xiaoshu Gong

    (Southeast University)

  • Zhihao Yu

    (Nanjing University)

  • Liang Ma

    (Southeast University)

  • Wenjie Sun

    (Nanjing University)

  • Si Gao

    (Nanjing University
    Nanjing Tech University)

  • Çağıl Köroğlu

    (Stanford University)

  • Wenfeng Wang

    (Nanjing University)

  • Lei Liu

    (Nanjing University)

  • Taotao Li

    (Nanjing University)

  • Hongkai Ning

    (Nanjing University)

  • Dongxu Fan

    (Nanjing University)

  • Yifei Xu

    (Nanjing University)

  • Xuecou Tu

    (Nanjing University)

  • Tao Xu

    (Southeast University)

  • Litao Sun

    (Southeast University)

  • Wenhui Wang

    (Southeast University)

  • Junpeng Lu

    (Southeast University)

  • Zhenhua Ni

    (Southeast University)

  • Jia Li

    (Hunan University)

  • Xidong Duan

    (Hunan University)

  • Peng Wang

    (Nanjing University)

  • Yuefeng Nie

    (Nanjing University)

  • Hao Qiu

    (Nanjing University)

  • Yi Shi

    (Nanjing University)

  • Eric Pop

    (Stanford University
    Department of Materials Science and Engineering, Stanford University
    Precourt Institute for Energy)

  • Jinlan Wang

    (Southeast University)

  • Xinran Wang

    (Nanjing University
    Nanjing University
    Suzhou Laboratory)

Abstract

The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance1,2. Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited3–12. In particular, the contact resistance has not surpassed that of covalently bonded metal–semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues3,7. Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony ( $$01\bar{1}2$$ 01 1 ̅ 2 ) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 108 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal–oxide–semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance, threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance13. The excellent electrical performance, stability and variability make antimony ( $$01\bar{1}2$$ 01 1 ̅ 2 ) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon.

Suggested Citation

  • Weisheng Li & Xiaoshu Gong & Zhihao Yu & Liang Ma & Wenjie Sun & Si Gao & Çağıl Köroğlu & Wenfeng Wang & Lei Liu & Taotao Li & Hongkai Ning & Dongxu Fan & Yifei Xu & Xuecou Tu & Tao Xu & Litao Sun & W, 2023. "Approaching the quantum limit in two-dimensional semiconductor contacts," Nature, Nature, vol. 613(7943), pages 274-279, January.
  • Handle: RePEc:nat:nature:v:613:y:2023:i:7943:d:10.1038_s41586-022-05431-4
    DOI: 10.1038/s41586-022-05431-4
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/s41586-022-05431-4
    File Function: Abstract
    Download Restriction: Access to the full text of the articles in this series is restricted.

    File URL: https://libkey.io/10.1038/s41586-022-05431-4?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Liting Liu & Yang Chen & Long Chen & Biao Xie & Guoli Li & Lingan Kong & Quanyang Tao & Zhiwei Li & Xiaokun Yang & Zheyi Lu & Likuan Ma & Donglin Lu & Xiangdong Yang & Yuan Liu, 2024. "Ultrashort vertical-channel MoS2 transistor using a self-aligned contact," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    2. Yu Pan & Tao Jian & Pingfan Gu & Yiwen Song & Qi Wang & Bo Han & Yuqia Ran & Zemin Pan & Yanping Li & Wanjin Xu & Peng Gao & Chendong Zhang & Jun He & Xiaolong Xu & Yu Ye, 2024. "Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    3. Xiaodong Zhang & Chenxi Huang & Zeyu Li & Jun Fu & Jiaran Tian & Zhuping Ouyang & Yuliang Yang & Xiang Shao & Yulei Han & Zhenhua Qiao & Hualing Zeng, 2024. "Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    4. Lu Li & Qinqin Wang & Fanfan Wu & Qiaoling Xu & Jinpeng Tian & Zhiheng Huang & Qinghe Wang & Xuan Zhao & Qinghua Zhang & Qinkai Fan & Xiuzhen Li & Yalin Peng & Yangkun Zhang & Kunshan Ji & Aomiao Zhi , 2024. "Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:nature:v:613:y:2023:i:7943:d:10.1038_s41586-022-05431-4. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.