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Twist angle-dependent conductivities across MoS2/graphene heterojunctions

Author

Listed:
  • Mengzhou Liao

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Ze-Wen Wu

    (Beijing Institute of Technology)

  • Luojun Du

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Tingting Zhang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Beijing Institute of Technology)

  • Zheng Wei

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jianqi Zhu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Hua Yu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jian Tang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Lin Gu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yanxia Xing

    (Beijing Institute of Technology)

  • Rong Yang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Beijing Key Laboratory for Nanomaterials and Nanodevices)

  • Dongxia Shi

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Beijing Key Laboratory for Nanomaterials and Nanodevices)

  • Yugui Yao

    (Beijing Institute of Technology)

  • Guangyu Zhang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Beijing Key Laboratory for Nanomaterials and Nanodevices
    Collaborative Innovation Center of Quantum Matter)

Abstract

Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene.

Suggested Citation

  • Mengzhou Liao & Ze-Wen Wu & Luojun Du & Tingting Zhang & Zheng Wei & Jianqi Zhu & Hua Yu & Jian Tang & Lin Gu & Yanxia Xing & Rong Yang & Dongxia Shi & Yugui Yao & Guangyu Zhang, 2018. "Twist angle-dependent conductivities across MoS2/graphene heterojunctions," Nature Communications, Nature, vol. 9(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-06555-w
    DOI: 10.1038/s41467-018-06555-w
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    Cited by:

    1. Yufei Sun & Yujia Wang & Enze Wang & Bolun Wang & Hengyi Zhao & Yongpan Zeng & Qinghua Zhang & Yonghuang Wu & Lin Gu & Xiaoyan Li & Kai Liu, 2022. "Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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