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Two-dimensional multibit optoelectronic memory with broadband spectrum distinction

Author

Listed:
  • Du Xiang

    (National University of Singapore
    National University of Singapore)

  • Tao Liu

    (National University of Singapore
    National University of Singapore)

  • Jilian Xu

    (Chinese Academy of Sciences)

  • Jun Y. Tan

    (National University of Singapore)

  • Zehua Hu

    (National University of Singapore
    National University of Singapore)

  • Bo Lei

    (National University of Singapore
    National University of Singapore)

  • Yue Zheng

    (National University of Singapore
    National University of Singapore)

  • Jing Wu

    (Institute of Materials Research and Engineering (IMRE))

  • A. H. Castro Neto

    (National University of Singapore
    National University of Singapore)

  • Lei Liu

    (Chinese Academy of Sciences)

  • Wei Chen

    (National University of Singapore
    National University of Singapore
    National University of Singapore
    National University of Singapore (Suzhou) Research Institute)

Abstract

Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 106, which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 104 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory.

Suggested Citation

  • Du Xiang & Tao Liu & Jilian Xu & Jun Y. Tan & Zehua Hu & Bo Lei & Yue Zheng & Jing Wu & A. H. Castro Neto & Lei Liu & Wei Chen, 2018. "Two-dimensional multibit optoelectronic memory with broadband spectrum distinction," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05397-w
    DOI: 10.1038/s41467-018-05397-w
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    Cited by:

    1. Rui Zhu & Huili Liang & Shangfeng Liu & Ye Yuan & Xinqiang Wang & Francis Chi-Chung Ling & Andrej Kuznetsov & Guangyu Zhang & Zengxia Mei, 2023. "Non-volatile optoelectronic memory based on a photosensitive dielectric," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    2. Gang Wu & Mohamed Abid & Mohamed Zerara & Jiung Cho & Miri Choi & Cormac Ó Coileáin & Kuan-Ming Hung & Ching-Ray Chang & Igor V. Shvets & Han-Chun Wu, 2024. "Miniaturized spectrometer with intrinsic long-term image memory," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    3. Xinyu Chen & Yufeng Xie & Yaochen Sheng & Hongwei Tang & Zeming Wang & Yu Wang & Yin Wang & Fuyou Liao & Jingyi Ma & Xiaojiao Guo & Ling Tong & Hanqi Liu & Hao Liu & Tianxiang Wu & Jiaxin Cao & Sitong, 2021. "Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning," Nature Communications, Nature, vol. 12(1), pages 1-8, December.

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