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Non-volatile optoelectronic memory based on a photosensitive dielectric

Author

Listed:
  • Rui Zhu

    (Songshan Lake Materials Laboratory
    Chinese Academy of Sciences)

  • Huili Liang

    (Songshan Lake Materials Laboratory
    Chinese Academy of Sciences)

  • Shangfeng Liu

    (Songshan Lake Materials Laboratory
    Peking University)

  • Ye Yuan

    (Songshan Lake Materials Laboratory)

  • Xinqiang Wang

    (Songshan Lake Materials Laboratory
    Peking University)

  • Francis Chi-Chung Ling

    (The University of Hong Kong)

  • Andrej Kuznetsov

    (University of Oslo)

  • Guangyu Zhang

    (Songshan Lake Materials Laboratory
    Chinese Academy of Sciences)

  • Zengxia Mei

    (Songshan Lake Materials Laboratory
    Chinese Academy of Sciences)

Abstract

Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (>20 V), high optical power density (>1 mW cm−2), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 µW cm−2, respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption.

Suggested Citation

  • Rui Zhu & Huili Liang & Shangfeng Liu & Ye Yuan & Xinqiang Wang & Francis Chi-Chung Ling & Andrej Kuznetsov & Guangyu Zhang & Zengxia Mei, 2023. "Non-volatile optoelectronic memory based on a photosensitive dielectric," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40938-y
    DOI: 10.1038/s41467-023-40938-y
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    References listed on IDEAS

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    1. Du Xiang & Tao Liu & Jilian Xu & Jun Y. Tan & Zehua Hu & Bo Lei & Yue Zheng & Jing Wu & A. H. Castro Neto & Lei Liu & Wei Chen, 2018. "Two-dimensional multibit optoelectronic memory with broadband spectrum distinction," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
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