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Experimental demonstration of an on-chip p-bit core based on stochastic magnetic tunnel junctions and 2D MoS2 transistors

Author

Listed:
  • John Daniel

    (Purdue University
    Purdue University)

  • Zheng Sun

    (Purdue University
    Purdue University)

  • Xuejian Zhang

    (Purdue University
    Purdue University)

  • Yuanqiu Tan

    (Purdue University
    Purdue University)

  • Neil Dilley

    (Purdue University)

  • Zhihong Chen

    (Purdue University
    Purdue University)

  • Joerg Appenzeller

    (Purdue University
    Purdue University)

Abstract

Probabilistic computing is a computing scheme that offers a more efficient approach than conventional complementary metal-oxide–semiconductor (CMOS)-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barrier stochastic magnetic tunnel junctions (MTJs) with a transistor circuit, a compact implementation is achieved. In this work, by combining stochastic MTJs with 2D-MoS2 field-effect transistors (FETs), we demonstrate an on-chip realization of a p-bit building block displaying voltage-controllable stochasticity. Supported by circuit simulations, we analyze the three transistor-one magnetic tunnel junction (3T-1MTJ) p-bit design, evaluating how the characteristics of each component influence the overall p-bit output. While the current approach has not reached the level of maturity required to compete with CMOS-compatible MTJ technology, the design rules presented in this work are valuable for future experimental implementations of scaled on-chip p-bit networks with reduced footprint.

Suggested Citation

  • John Daniel & Zheng Sun & Xuejian Zhang & Yuanqiu Tan & Neil Dilley & Zhihong Chen & Joerg Appenzeller, 2024. "Experimental demonstration of an on-chip p-bit core based on stochastic magnetic tunnel junctions and 2D MoS2 transistors," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48152-0
    DOI: 10.1038/s41467-024-48152-0
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    References listed on IDEAS

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    1. Pin-Chun Shen & Cong Su & Yuxuan Lin & Ang-Sheng Chou & Chao-Ching Cheng & Ji-Hoon Park & Ming-Hui Chiu & Ang-Yu Lu & Hao-Ling Tang & Mohammad Mahdi Tavakoli & Gregory Pitner & Xiang Ji & Zhengyang Ca, 2021. "Ultralow contact resistance between semimetal and monolayer semiconductors," Nature, Nature, vol. 593(7858), pages 211-217, May.
    2. William A. Borders & Ahmed Z. Pervaiz & Shunsuke Fukami & Kerem Y. Camsari & Hideo Ohno & Supriyo Datta, 2019. "Integer factorization using stochastic magnetic tunnel junctions," Nature, Nature, vol. 573(7774), pages 390-393, September.
    3. Nihal Sanjay Singh & Keito Kobayashi & Qixuan Cao & Kemal Selcuk & Tianrui Hu & Shaila Niazi & Navid Anjum Aadit & Shun Kanai & Hideo Ohno & Shunsuke Fukami & Kerem Y. Camsari, 2024. "CMOS plus stochastic nanomagnets enabling heterogeneous computers for probabilistic inference and learning," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
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