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Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes

Author

Listed:
  • Hailu Wang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Hui Xia

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yaqian Liu

    (Chinese Academy of Sciences)

  • Yue Chen

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Runzhang Xie

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Zhen Wang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Peng Wang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jinshui Miao

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Fang Wang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Tianxin Li

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Lan Fu

    (The Australian National University)

  • Piotr Martyniuk

    (Military University of Technology)

  • Jianbin Xu

    (The Chinese University of Hong Kong)

  • Weida Hu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Wei Lu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    ShanghaiTech University)

Abstract

Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe2 structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, Ethre ≈ Eg, where Eg is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices.

Suggested Citation

  • Hailu Wang & Hui Xia & Yaqian Liu & Yue Chen & Runzhang Xie & Zhen Wang & Peng Wang & Jinshui Miao & Fang Wang & Tianxin Li & Lan Fu & Piotr Martyniuk & Jianbin Xu & Weida Hu & Wei Lu, 2024. "Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-47958-2
    DOI: 10.1038/s41467-024-47958-2
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    References listed on IDEAS

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    1. Ji-Hee Kim & Matthew R. Bergren & Jin Cheol Park & Subash Adhikari & Michael Lorke & Thomas Frauenheim & Duk-Hyun Choe & Beom Kim & Hyunyong Choi & Tom Gregorkiewicz & Young Hee Lee, 2019. "Carrier multiplication in van der Waals layered transition metal dichalcogenides," Nature Communications, Nature, vol. 10(1), pages 1-9, December.
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