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Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor

Author

Listed:
  • Feng Wang

    (Nanjing University
    Nanjing University)

  • Wangqiang Shen

    (Huazhong University of Science and Technology
    Hefei University of Technology)

  • Yuan Shui

    (Xi’an Jiaotong University)

  • Jun Chen

    (Nanjing University
    Nanjing University)

  • Huaiqiang Wang

    (Nanjing Normal University)

  • Rui Wang

    (Nanjing University)

  • Yuyuan Qin

    (Nanjing University)

  • Xuefeng Wang

    (Nanjing University)

  • Jianguo Wan

    (Nanjing University)

  • Minhao Zhang

    (Nanjing University
    Nanjing University)

  • Xing Lu

    (Huazhong University of Science and Technology)

  • Tao Yang

    (Xi’an Jiaotong University)

  • Fengqi Song

    (Nanjing University
    Nanjing University)

Abstract

Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 $${\mu }_{{{{{{\rm{B}}}}}}}$$ μ B to 5.1 $${\mu }_{{{{{{\rm{B}}}}}}}$$ μ B for the ground-state GN at an electric field strength of 3 $$-$$ − 10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.

Suggested Citation

  • Feng Wang & Wangqiang Shen & Yuan Shui & Jun Chen & Huaiqiang Wang & Rui Wang & Yuyuan Qin & Xuefeng Wang & Jianguo Wan & Minhao Zhang & Xing Lu & Tao Yang & Fengqi Song, 2024. "Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46854-z
    DOI: 10.1038/s41467-024-46854-z
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    References listed on IDEAS

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    1. Toshio Miyamachi & Tobias Schuh & Tobias Märkl & Christopher Bresch & Timofey Balashov & Alexander Stöhr & Christian Karlewski & Stephan André & Michael Marthaler & Martin Hoffmann & Matthias Geilhufe, 2013. "Stabilizing the magnetic moment of single holmium atoms by symmetry," Nature, Nature, vol. 503(7475), pages 242-246, November.
    2. Fabian D. Natterer & Kai Yang & William Paul & Philip Willke & Taeyoung Choi & Thomas Greber & Andreas J. Heinrich & Christopher P. Lutz, 2017. "Reading and writing single-atom magnets," Nature, Nature, vol. 543(7644), pages 226-228, March.
    3. Tian Pei & James O. Thomas & Simen Sopp & Ming-Yee Tsang & Nicola Dotti & Jonathan Baugh & Nicholas F. Chilton & Salvador Cardona-Serra & Alejandro Gaita-Ariño & Harry L. Anderson & Lapo Bogani, 2022. "Exchange-induced spin polarization in a single magnetic molecule junction," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
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