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In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements

Author

Listed:
  • Jinshi Li

    (South China University of Technology)

  • Pingchuan Shen

    (South China University of Technology)

  • Zeyan Zhuang

    (South China University of Technology)

  • Junqi Wu

    (South China University of Technology)

  • Ben Zhong Tang

    (The Chinese University of Hong Kong)

  • Zujin Zhao

    (South China University of Technology)

Abstract

Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator.

Suggested Citation

  • Jinshi Li & Pingchuan Shen & Zeyan Zhuang & Junqi Wu & Ben Zhong Tang & Zujin Zhao, 2023. "In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements," Nature Communications, Nature, vol. 14(1), pages 1-13, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-42028-5
    DOI: 10.1038/s41467-023-42028-5
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    References listed on IDEAS

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