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Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Author

Listed:
  • Yicheng Li

    (Huazhong University of Science and Technology)

  • Zilian Qi

    (Huazhong University of Science and Technology)

  • Yuxiao Lan

    (Huazhong University of Science and Technology)

  • Kun Cao

    (Huazhong University of Science and Technology)

  • Yanwei Wen

    (Huazhong University of Science and Technology)

  • Jingming Zhang

    (Huazhong University of Science and Technology)

  • Eryan Gu

    (Huazhong University of Science and Technology)

  • Junzhou Long

    (Huazhong University of Science and Technology
    Hubei Yangtze Memory Laboratories)

  • Jin Yan

    (Huazhong University of Science and Technology)

  • Bin Shan

    (Huazhong University of Science and Technology)

  • Rong Chen

    (Huazhong University of Science and Technology
    Hubei Yangtze Memory Laboratories)

Abstract

Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The ‘reduction-adsorption-oxidation’ ALD cycles are designed by adding an in-situ reduction step, effectively inhibiting nucleation on copper. As a result, tantalum oxide exhibits selective deposition on various oxides, with no observable growth on Cu. Furthermore, the self-aligned TaOx is successfully deposited on Cu/SiO2 nanopatterns, avoiding excessive mushroom growth at the edges or the emergence of undesired nucleation defects within the Cu region. The film thickness on SiO2 exceeds 5 nm with a selectivity of 100%, marking it as one of the highest reported to date. This method offers a streamlined and highly precise self-aligned manufacturing technique, which is advantageous for the future downscaling of integrated circuits.

Suggested Citation

  • Yicheng Li & Zilian Qi & Yuxiao Lan & Kun Cao & Yanwei Wen & Jingming Zhang & Eryan Gu & Junzhou Long & Jin Yan & Bin Shan & Rong Chen, 2023. "Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40249-2
    DOI: 10.1038/s41467-023-40249-2
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    References listed on IDEAS

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    1. Johannes V. Barth & Giovanni Costantini & Klaus Kern, 2005. "Engineering atomic and molecular nanostructures at surfaces," Nature, Nature, vol. 437(7059), pages 671-679, September.
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    4. Rainer Timm & Ashley R. Head & Sofie Yngman & Johan V. Knutsson & Martin Hjort & Sarah R. McKibbin & Andrea Troian & Olof Persson & Samuli Urpelainen & Jan Knudsen & Joachim Schnadt & Anders Mikkelsen, 2018. "Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide," Nature Communications, Nature, vol. 9(1), pages 1-9, December.
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