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Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide

Author

Listed:
  • Rainer Timm

    (Lund University)

  • Ashley R. Head

    (Lund University
    Lawrence Berkeley National Laboratory)

  • Sofie Yngman

    (Lund University)

  • Johan V. Knutsson

    (Lund University)

  • Martin Hjort

    (Lund University
    Lund University, Box 118)

  • Sarah R. McKibbin

    (Lund University)

  • Andrea Troian

    (Lund University)

  • Olof Persson

    (Lund University)

  • Samuli Urpelainen

    (Lund University)

  • Jan Knudsen

    (Lund University
    Lund University)

  • Joachim Schnadt

    (Lund University)

  • Anders Mikkelsen

    (Lund University)

Abstract

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor–oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor–oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Suggested Citation

  • Rainer Timm & Ashley R. Head & Sofie Yngman & Johan V. Knutsson & Martin Hjort & Sarah R. McKibbin & Andrea Troian & Olof Persson & Samuli Urpelainen & Jan Knudsen & Joachim Schnadt & Anders Mikkelsen, 2018. "Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide," Nature Communications, Nature, vol. 9(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-03855-z
    DOI: 10.1038/s41467-018-03855-z
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    Cited by:

    1. Yicheng Li & Zilian Qi & Yuxiao Lan & Kun Cao & Yanwei Wen & Jingming Zhang & Eryan Gu & Junzhou Long & Jin Yan & Bin Shan & Rong Chen, 2023. "Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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