IDEAS home Printed from https://ideas.repec.org/a/nat/natcom/v5y2014i1d10.1038_ncomms5781.html
   My bibliography  Save this article

Selective metal deposition at graphene line defects by atomic layer deposition

Author

Listed:
  • Kwanpyo Kim

    (Stanford University
    Ulsan National Institute of Science and Technology (UNIST))

  • Han-Bo-Ram Lee

    (Stanford University
    Incheon National University)

  • Richard W. Johnson

    (Stanford University)

  • Jukka T. Tanskanen

    (Stanford University
    University of Eastern Finland)

  • Nan Liu

    (Stanford University)

  • Myung-Gil Kim

    (Stanford University
    Chung-Ang University, 221 Heukseok-dong, Dongjak-gu)

  • Changhyun Pang

    (Stanford University
    School of Chemical Engineering, Sungkyunkwan University (SKKU))

  • Chiyui Ahn

    (Stanford University)

  • Stacey F. Bent

    (Stanford University)

  • Zhenan Bao

    (Stanford University)

Abstract

One-dimensional defects in graphene have a strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene’s line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene’s grain boundaries, folds and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt–graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperature and show its advantages over other evaporative Pt deposition methods, in which Pt decorates the graphene surface non-selectively.

Suggested Citation

  • Kwanpyo Kim & Han-Bo-Ram Lee & Richard W. Johnson & Jukka T. Tanskanen & Nan Liu & Myung-Gil Kim & Changhyun Pang & Chiyui Ahn & Stacey F. Bent & Zhenan Bao, 2014. "Selective metal deposition at graphene line defects by atomic layer deposition," Nature Communications, Nature, vol. 5(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5781
    DOI: 10.1038/ncomms5781
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/ncomms5781
    File Function: Abstract
    Download Restriction: no
    File URL: https://libkey.io/10.1038/ncomms5781?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Jeongwon Park & Seung Jae Kwak & Sumin Kang & Saeyoung Oh & Bongki Shin & Gichang Noh & Tae Soo Kim & Changhwan Kim & Hyeonbin Park & Seung Hoon Oh & Woojin Kang & Namwook Hur & Hyun-Jun Chai & Minsoo, 2024. "Area-selective atomic layer deposition on 2D monolayer lateral superlattices," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    2. Yicheng Li & Zilian Qi & Yuxiao Lan & Kun Cao & Yanwei Wen & Jingming Zhang & Eryan Gu & Junzhou Long & Jin Yan & Bin Shan & Rong Chen, 2023. "Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5781. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.