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Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature

Author

Listed:
  • Hangtian Wang

    (Beihang University
    Institut Jean Lamour)

  • Haichang Lu

    (Beihang University
    Cambridge University)

  • Zongxia Guo

    (Beihang University
    Institut Jean Lamour)

  • Ang Li

    (Beihang University)

  • Peichen Wu

    (Beihang University)

  • Jing Li

    (Beihang University)

  • Weiran Xie

    (Beihang University)

  • Zhimei Sun

    (Beihang University)

  • Peng Li

    (Auburn University)

  • Héloïse Damas

    (Institut Jean Lamour)

  • Anna Maria Friedel

    (Institut Jean Lamour
    Technische Universität Kaiserslautern)

  • Sylvie Migot

    (Institut Jean Lamour)

  • Jaafar Ghanbaja

    (Institut Jean Lamour)

  • Luc Moreau

    (Institut Jean Lamour)

  • Yannick Fagot-Revurat

    (Institut Jean Lamour)

  • Sébastien Petit-Watelot

    (Institut Jean Lamour)

  • Thomas Hauet

    (Institut Jean Lamour)

  • John Robertson

    (Cambridge University)

  • Stéphane Mangin

    (Institut Jean Lamour)

  • Weisheng Zhao

    (Beihang University)

  • Tianxiao Nie

    (Beihang University)

Abstract

Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

Suggested Citation

  • Hangtian Wang & Haichang Lu & Zongxia Guo & Ang Li & Peichen Wu & Jing Li & Weiran Xie & Zhimei Sun & Peng Li & Héloïse Damas & Anna Maria Friedel & Sylvie Migot & Jaafar Ghanbaja & Luc Moreau & Yanni, 2023. "Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-37917-8
    DOI: 10.1038/s41467-023-37917-8
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    References listed on IDEAS

    as
    1. Bevin Huang & Genevieve Clark & Efrén Navarro-Moratalla & Dahlia R. Klein & Ran Cheng & Kyle L. Seyler & Ding Zhong & Emma Schmidgall & Michael A. McGuire & David H. Cobden & Wang Yao & Di Xiao & Pabl, 2017. "Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit," Nature, Nature, vol. 546(7657), pages 270-273, June.
    2. Cheng Gong & Lin Li & Zhenglu Li & Huiwen Ji & Alex Stern & Yang Xia & Ting Cao & Wei Bao & Chenzhe Wang & Yuan Wang & Z. Q. Qiu & R. J. Cava & Steven G. Louie & Jing Xia & Xiang Zhang, 2017. "Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals," Nature, Nature, vol. 546(7657), pages 265-269, June.
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