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Control of perovskite film crystallization and growth direction to target homogeneous monolithic structures

Author

Listed:
  • Daming Zheng

    (Shenzhen University
    Chimie ParisTech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris (IRCP), UMR8247)

  • Florian Raffin

    (Chimie ParisTech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris (IRCP), UMR8247)

  • Polina Volovitch

    (Chimie ParisTech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris (IRCP), UMR8247)

  • Thierry Pauporté

    (Chimie ParisTech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris (IRCP), UMR8247)

Abstract

Getting performant organo-metal halide perovskite films for various application remains challenging. Here, we show the behavior of solvent and perovskite elements for four different perovskites families and nine different initial precursor solution systems in the case of the most popular preparation process which includes an anti-solvent dripping-assisted spin coating of a precursor solution and a subsequent thermal annealing. We show how the initial solution composition affects, first, the film formed by spin coating and anti-solvent dripping and, second, the processes occurring upon thermal annealing, including crystal domain evolution and the grain growth mechanism. We propose a universal typology which distinguishes three types for the growth direction of perovskite crystals: downward (Type I), upward (Type II) and lateral (Type III). The latter results in large, monolithic grains and we show that this mode must be targeted for the preparation of efficient perovskite light absorber thin films of solar cells.

Suggested Citation

  • Daming Zheng & Florian Raffin & Polina Volovitch & Thierry Pauporté, 2022. "Control of perovskite film crystallization and growth direction to target homogeneous monolithic structures," Nature Communications, Nature, vol. 13(1), pages 1-12, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34332-3
    DOI: 10.1038/s41467-022-34332-3
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